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參數(shù)資料
| 型號： | HMC282 |
| 廠商： | 美國訊泰微波有限公司上海代表處 |
| 英文描述： | Header; No. of Contacts:50; Pitch Spacing:0.079"; No. of Rows:2; Gender:Male; Series:1552; Body Material:Glass Filled Polyester; Connector Retention Style:Latch/Ejector; Contact Termination:Through Hole; Housing Style:Right-Angle RoHS Compliant: Yes |
| 中文描述： | 砷化鎵MMIC低噪聲放大器36 - 40千兆赫 |
| 文件頁數(shù)： | 5/6頁 |
| 文件大?。?/td> | 109K |
| 代理商： | HMC282 |
1 - 64
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343
Fax: 978-250-3373
Web Site: www.hittite.com
MICROWAVE CORPORATION
F
EBRUARY
2001
A
M
1
D
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling,
Mounting, Bonding Note).
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing
RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should
be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to
accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-
tab) which is then attached to the ground plane (Figure 2).
Microstrip substrates should brought as close to the die as possible
in order to minimize bond length. Typical die-to-substrate spacing is 0.076mm (3 mils). Gold ribbon of 0.076 mm x 0.013
mm (3mil x 0.5 mil) is recommended to minimize inductance on the RF ports. 0.025 mm (1 mil) diameter ball or wedge
bonds are acceptable for DC bias connections.
RF bypass capacitor should be used on the Vdd & Vgg inputs. 100 pF single layer capacitors (mounted eutectically or
by conductive epoxy) placed no further than 0.762mm (30 Mils) from the chip are recommended.
HMC282 LOW NOISE AMPLIFIER 36 - 40 GHz
HMC282
V
01.0700
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HMC283 | 600000 SYSTEM GATE 2.5 VOLT FPGA - NOT RECOMMENDED for NEW DESIGN |
| HMC283LM1 | SMT MEDIUM POWER GaAs MMIC AMPLIFIER, 17 - 40 GHz |
| HMC284MS8G | SPDT NON-REFLECTIVE SWITCH, DC - 3.5 GHz |
| HMC285 | 600000 SYSTEM GATE 2.5 VOLT FPGA - NOT RECOMMENDED for NEW DESIGN |
| HMC286 | 600000 SYSTEM GATE 2.5 VOLT FPGA - NOT RECOMMENDED for NEW DESIGN |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HMC282_00 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs MMIC LOW NOISE AMPLIFIER, 36 - 40 GHz |
| HMC283 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs MMIC MEDIUM POWER AMPLIFIER, 17 - 40 GHz |
| HMC283_07 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs MMIC MEDIUM POWER AMPLIFIER, 17 - 40 GHz |
| HMC283_08 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs MMIC MEDIUM POWER AMPLIFIER, 17 - 40 GHz |
| HMC283_10 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs MMIC MEDIUM POWER AMPLIFIER, 17 - 40 GHz |
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