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參數(shù)資料
| 型號： | HMC262 |
| 廠商： | 美國訊泰微波有限公司上海代表處 |
| 英文描述： | GaAs MMIC LOW NOISE AMPLIFIER 15 - 24 GHz |
| 中文描述： | 砷化鎵MMIC低噪聲放大器15 - 24千兆赫 |
| 文件頁數(shù)： | 5/6頁 |
| 文件大?。?/td> | 120K |
| 代理商： | HMC262 |
1 - 20
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343
Fax: 978-250-3373
Web Site: www.hittite.com
MICROWAVE CORPORATION
F
EBRUARY
2001
A
M
1
D
MIC Assembly Techniques for HMC262
HMC262 LOW NOISE AMPLIFIER 15 - 24 GHz
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or
with conductive epoxy (see HMC general Handling, Mounting, Bond-
ing Note).
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina
thin film substrates are recommended for bringing RF to and from the
chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates
must be used, the die should be raised 0.150mm (6 mils) so that the
surface of the die is coplanar with the surface of the substrate. One way
to accomplish this is to attach the 0.102mm (4 mil) thick die to a
0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is
then attached to the ground plane (Figure 2).
Microstrip substrates should brought as close to the die as possible in
order to minimize bond wire length. Typical die-to-substrate spacing
is 0.076mm (3 mils).
An RF bypass capacitor should be used on the Vdd input. A 100 pF single layer capacitor (mounted eutectically or by
conductive epoxy) placed no further than 0.762mm (30 Mils) from the chip is recommended. The photo in figure 3 shows
a typical assembly for the HMC262 MMIC chip.
Figure 3
: Typical HMC262 Assembly
HMC262
V
01.05.00
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