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參數(shù)資料
| 型號(hào)： | HMC182S14ETR |
| 廠(chǎng)商： | HITTITE MICROWAVE CORP |
| 元件分類(lèi)： | 開(kāi)關(guān) |
| 英文描述： | 0 MHz - 2000 MHz RF/MICROWAVE DIVERSITY SWITCH, 1.2 dB INSERTION LOSS |
| 封裝： | ROHS COMPLIANT, PLASTIC, SMT, SOIC-14 |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大?。?/td> | 198K |
| 代理商： | HMC182S14ETR |
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC182S14 / 182S14E
GaAs MMIC SP4T NON-REFLECTIVE
SWITCH, DC - 2 GHz
v03.0805
General Description
Features
Functional Diagram
Low Insertion Loss: 0.8dB
Integrated 2:4 Decoder
14 Lead SOIC Package
Electrical Specifications,
T
A = +25° C, For 0/-5V Control and Vee = -5V in a 50 Ohm System
Typical Applications
The HMC182S14 / HMC182S14E is ideal for:
800 - 1000 MHz Basestation
The
HMC182S14
&
HMC182S14E
are
low-cost
terminated SP4T switches in 14-lead SOIC packages
for use in antenna diversity, switched filter banks,
gain/attenuation
selection,
and
general
channel
multiplexing applications. The switch can control
signals up to 2 GHz. A 2:4 decoder is integrated on
the switch, requiring only 2 control lines and a neg-
ative bias to select each RF path. The 2:4 decoder
replaces 4 to 8 control lines normally required by
GaAs SP4T switches. The HMC182S14(E) are drop-in
replacements for the HMC165S14 in applications
requiring low “off state” VSWR. See positive bias
/ TTL SP4T HMC241QS16.
Parameter
Frequency
Min.
Typ.
Max.
Units
Insertion Loss
DC - 1.0 GHz
DC - 2.0 GHz
0.7
0.8
1.1
1.2
dB
Isolation
DC - 0.5 GHz
DC - 1.0 GHz
DC - 2.0 GHz
41
36
28
45
40
32
dB
Return Loss
“On State”
“Off State”
DC - 1.0 GHz
DC - 2.0 GHz
DC - 1.0 GHz
DC - 2.0 GHz
21
16
17
13
25
20
21
17
dB
Input Power for 1 dB Compression
50 MHz
0.5 - 2.0 GHz
22
24
dBm
Input Third Order Intercept
(Two-Tone Input Power = 7 dBm Each Tone).
50 MHz
0.5 - 1.0 GHz
0.5 - 2.0 GHz
25
41
37
30
45
41
dBm
Switching Characteristics
DC - 2.0 GHz
tRISE, tFALL (10/90% RF)
tON, tOFF (50% CTL to 10/90% RF)
25
50
ns
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