參數(shù)資料
型號(hào): HMC121G8
廠商: 美國(guó)訊泰微波有限公司上海代表處
英文描述: GaAs MMIC SMT VOLTAGE-VARIABLE ATTENUATOR DC - 8 GHz
中文描述: 砷化鎵微波單片集成電路表面貼裝電壓可變衰減器直流- 8千兆赫
文件頁(yè)數(shù): 4/6頁(yè)
文件大?。?/td> 191K
代理商: HMC121G8
2 - 17
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343
Fax: 978-250-3373
Web Site: www.hittite.com
MICROWAVE CORPORATION
F
EBRUARY
2001
2
A
T
S
HMC121C8 SMT VOLTAGE-VARIABLE ATTENUATOR DC - 10 GHz
V1
O
I
V2
RF2
RF1
50
50
500
500
500
500
Schematic
Absolute Maximum Ratings
RF Input
+16dBm
Control Voltage Range
+1.0 to -6.0 Vdc
Storage Temperature
-65 to +150 deg C
Operating Temperature
-55 to +85 deg C
Outline Drawing
HMC121C8
1.
MATERIAL:
A) PACKAGE BODY & COVER : WHITE ALUMINA (92%)
B) LEADS & PACKAGE BOTTOM: COPPER
PLATING : ELECTROLYTIC GOLD 100 - 200 MICROINCHES
OVER ELECTROLYTIC NICKEL 100 TO 200 MICROINCHES.
DIMENSIONS ARE IN INCHES (MILLIMETERS).
UNLESS OTHERWISE SPECIFIED TOL. ARE ±0.005(±0.13).
ALL UNLABELED LEADS ARE GROUND. THESE LEADS ARE
CONNECTED INTERNALLY TO THE PACKAGED BOTTOM GROUND.
THE PACKAGE BOTTOM RF GROUND
MUST
BE SOLDERED TO
THE PCB RF GROUND.
PACKAGE LENGTH AND WIDTH DIMENSIONS SHOWN DO NOT INCLUDE
LID SEAL PROTRUSION. ALLOWABLE PROTRUSION SHALL BE 0.005
(0.127MM) PER SIDE.
2 .
3.
4.
5.
V
03.0400
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