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參數(shù)資料
| 型號： | HMC-XTB110 |
| 廠商： | HITTITE MICROWAVE CORP |
| 元件分類： | 倍頻器 |
| 英文描述： | RF/MICROWAVE FREQUENCY TRIPLER |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 164K |
| 代理商： | HMC-XTB110 |
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
GaAs MMIC PASSIVE x3 FREQUENCY
MULTIPLIER, 24 - 30 GHz INPUT
v00.1008
General Description
Features
Functional Diagram
Electrical Specifications*, T
A = 25 °C, Pin = +13 dBm
Typical Applications
This HMC-XTB110 is ideal for:
FCC E-Band Communication Systems
Short-Haul / High Capacity Radios
Automotive Radar
Test & Measurement Equipment
The HMC-XTB110 is a monolithic X3 Passive Fre-
quency Multiplier which utilizes GaAs Shottky Diode
technology, and exhibits low conversion loss and high
Fo isolation.
This wideband X3 multiplier requires
no DC power, and is targeted to high volume appli-
cations where frequency X3 of a lower frequency is
more economical than directly generating a higher
frequency. All bond pads and the die backside are
Ti/Au metallized and the Shottky diode devices are
fully passivated for reliable operation.
The HMC-
XTB110
Passive
X3
MMIC
is
compatible
with
conventional die attach methods, as well as thermo-
compression and thermosonic wire bonding, making
it ideal for MCM and hybrid microcircuit applications.
All data shown herein is measured with the chip in a
50 Ohm environment and contacted with RF probes.
HMC-XTB110
Parameter
Min.
Typ.
Max.
Units
Frequency Range Input
24 - 30
GHz
Frequency Range Output
72 - 90
GHz
Conversion Loss
19
dB
*Unless otherwise indicated, all measurements are from probed die
Conversion Loss: 19 dB
Input Drive: +13 dBm
Passive: No DC Bias Required
Die Size: 1.1 x 1.4 x 0.1 mm
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