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參數(shù)資料
| 型號： | HMC-APH462 |
| 廠商： | HITTITE MICROWAVE CORP |
| 元件分類： | 放大器 |
| 英文描述： | 15000 MHz - 27000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| 封裝： | 3.70 X 2.62 MM, 0.10 MM HEIGHT, DIE-10 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 229K |
| 代理商： | HMC-APH462 |
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
GaAs HEMT MMIC 1 WATT POWER
AMPLIFIER, 15 - 27 GHz
v03.0209
General Description
Features
Functional Diagram
Output IP3: +37 dBm
P1dB: +29 dBm
Gain: 17 dB
Supply Voltage: +5V
50 Ohm Matched Input/Output
Die Size: 3.70 x 2.62 x 0.1 mm
Electrical Specifications[1]
T
A = +25° C, Vdd1 = Vdd2 = Vdd3 = Vdd4 = 5V, Idd1 + Idd2 + Idd3 + Idd4 = 1440 mA
[2]
Typical Applications
This HMC-APH462 is ideal for:
Point-to-Point Radios
Point-to-Multi-Point Radios
VSAT
Military & Space
The HMC-APH462 is a high dynamic range, two stage
GaAs HEMT MMIC 0.8 Watt Power Amplifier which
operates between 15 and 27 GHz. The HMC-APH462
provides 17 dB of gain, and an output power of +29
dBm at 1 dB compression from a +5V supply voltage.
All bond pads and the die backside are Ti/Au metallized
and the amplifier device is fully passivated for reliable
operation. The HMC-APH462 GaAs HEMT MMIC 1
Watt Power Amplifier is compatible with conventional
die attach methods, as well as thermocompression
and thermosonic wire bonding, making it ideal for
MCM and hybrid microcircuit applications.
All data
Shown herein is measured with the chip in a 50 Ohm
environment and contacted with RF probes.
HMC-APH462
Parameter
Min.
Typ.
Max.
Min.
Typ.
Max.
Units
Frequency Range
15 - 17
17 - 27
GHz
Gain
12
16
13
17
dB
Input Return Loss
15
18
dB
Output Return Loss
15
18
dB
Output power for 1dB Compression (P1dB)
26
27
29
dBm
Output Third Order Intercept (IP3)
34
37
Supply Current (Idd1+Idd2 + Idd3 + Idd4)
1440
mA
[1] Unless otherwise indicated, all measurements are from probed die
[2] Adjust Vgg1=Vgg2=Vgg3=Vgg4 between -1V to +0.3V (typ. -0.5V) to achieve Idd1 + Idd4 = 480 mA, Idd2 + Idd3 = 960 mA
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HMC-APH462_09 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs HEMT MMIC 1 WATT POWER AMPLIFIER, 15 - 27 GHz |
| HMC-APH462-SX | 功能描述:RF Amplifier IC VSAT, DBS 15GHz ~ 27GHz Die 制造商:analog devices inc. 系列:- 包裝:托盤 零件狀態(tài):有效 頻率:15GHz ~ 27GHz P1dB:26dBm 增益:16dB 噪聲系數(shù):- RF 類型:VSAT，DBS 電壓 - 電源:5V 電流 - 電源:1.44A 測試頻率:15GHz ~ 17GHz 封裝/外殼:模具 供應(yīng)商器件封裝:模具 標(biāo)準(zhǔn)包裝:2 |
| HMC-APH473 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs HEMT MMIC 1 WATT POWER AMPLIFIER, 37 - 40 GHz |
| HMC-APH473-2-SX | 功能描述:IC MMIC POWER AMP DIE 制造商:analog devices inc. 系列:- 包裝:托盤 零件狀態(tài):在售 頻率:37GHz ~ 40GHz P1dB:28dBm 增益:15dB 噪聲系數(shù):- RF 類型:VSAT，DBS 電壓 - 電源:5V 電流 - 電源:1.08A 測試頻率:37GHz ~ 40GHz 封裝/外殼:模具 供應(yīng)商器件封裝:模具 標(biāo)準(zhǔn)包裝:2 |
| HMC-APH478 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs HEMT MMIC 1 WATT POWER AMPLIFIER, 18 - 20 GHz |
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