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參數(shù)資料
| 型號(hào)： | HMC-ALH310 |
| 廠商： | HITTITE MICROWAVE CORP |
| 元件分類： | 放大器 |
| 英文描述： | 37000 MHz - 42000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封裝： | 1.80 X 0.73 MM, 0.10 MM HEIGHT, DIE-4 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 185K |
| 代理商： | HMC-ALH310 |
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
GaAs HEMT LOW NOISE
AMPLIFIER, 37 - 42 GHz
v02.0209
General Description
Features
Functional Diagram
Noise Figure: 3.5 dB
P1dB: +12 dBm
Gain: 22 dB
Supply Voltage: +2.5V
50 Ohm Matched Input/Output
Die Size: 1.80 x 0.73 x 0.1 mm
Electrical Specifications, T
A = +25° C, Vdd = 2.5V, Idd = 52 mA*
Typical Applications
This HMC-ALH310 is ideal for:
Point-to-Point Radios
Point-to-Multi-Point Radios
Military & Space
The HMC-ALH310 is a three stage GaAs HEMT MMIC
Low Noise Amplifier (LNA) which operates between
37 and 42 GHz. The HMC-ALH310 features 22 dB of
small signal gain, 3.5 dB of noise figure and an output
power of +12 dBm at 1dB compression from a +2.5V
supply voltage. All bond pads and the die backside
are Ti/Au metallized and the amplifier device is fully
passivated for reliable operation. This versatile LNA
is compatible with conventional die attach methods,
as well as thermocompression and thermosonic
wirebonding, making it ideal for MCM and hybrid
microcircuit applications. All data shown herein is
measured with the chip in a 50 Ohm environment and
contacted with RF probes.
HMC-ALH310
Parameter
Min.
Typ.
Max.
Units
Frequency Range
37 - 42
GHz
Gain
20
22
dB
Noise Figure
3.5
4.5
dB
Input Return Loss
4dB
Output Return Loss
8dB
Output Power for 1 dB Compression (P1dB)
12
dBm
Supply Current (Idd)(Vdd= 2.5V,Vgg= -0.3V Typ.)
52
mA
*Unless otherwise indicated, all measurements are from probed die
[2] Adjust Vgg between -1V to +0.3V (Typ. -0.2V) to achieve Idd
total = 52 mA
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HMC-ALH310-SX | 功能描述:RF Amplifier IC General Purpose 37GHz ~ 42GHz Die 制造商:analog devices inc. 系列:- 包裝:托盤 零件狀態(tài):要求報(bào)價(jià) 頻率:37GHz ~ 42GHz P1dB:12dBm 增益:22dB 噪聲系數(shù):3.5dB RF 類型:通用 電壓 - 電源:2.5V 電流 - 電源:52mA 測(cè)試頻率:37GHz ~ 42GHz 封裝/外殼:模具 供應(yīng)商器件封裝:模具 標(biāo)準(zhǔn)包裝:2 |
| HMC-ALH311 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:ACTIVE BIAS CONTROLLER |
| HMC-ALH311-SX | 功能描述:IC RF AMP LN DIE 制造商:analog devices inc. 系列:- 包裝:托盤 零件狀態(tài):在售 頻率:22GHz ~ 26.5GHz P1dB:12dBm 增益:25dB 噪聲系數(shù):3.5dB RF 類型:通用 電壓 - 電源:2.5V 電流 - 電源:52mA 測(cè)試頻率:22GHz ~ 24GHz 封裝/外殼:模具 供應(yīng)商器件封裝:模具 標(biāo)準(zhǔn)包裝:2 |
| HMC-ALH313 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs HEMT MMIC LOW NOISE AMPLIFIER, 27 - 33 GHz |
| HMC-ALH313_09 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs HEMT MMIC LOW NOISE AMPLIFIER, 27 - 33 GHz |
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