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參數(shù)資料
| 型號： | HMBTA94 |
| 廠商： | HSMC CORP. |
| 英文描述： | PNP EPITAXIAL PLANAR TRANSISTOR |
| 中文描述： | 進步黨外延平面晶體管 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 30K |
| 代理商： | HMBTA94 |
HI-SINCERITY
MICROELECTRONICS CORP.
HMBTA94
PNP EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HN200209
Issued Date : 2000.11.01
Revised Date : 2002.10.25
Page No. : 1/3
HMBTA94
HSMC Product Specification
Description
The HMBTA94 is designed for application that requires high voltage.
Features
High Breakdown Voltage: VCEO=400(Min.) at IC=1mA
Complementary to HMBTA44
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature............................................................................................ -55 ~ +150
°
C
Junction Temperature.................................................................................... +150
°
C Maximum
Maximum Power Dissipation
Total Power Dissipation (Ta=25
°
C)................................................................................ 350 mW
Maximum Voltages and Currents (Ta=25
°
C)
VCBO Collector to Base Voltage...................................................................................... -400 V
VCEO Collector to Emitter Voltage................................................................................... -400 V
VEBO Emitter to Base Voltage............................................................................................. -6 V
IC Collector Current ...................................................................................................... -150 mA
Characteristics
(Ta=25
°
C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
ICES
*VCE(sat)1
*VCE(sat)2
*VCE(sat)3
*VBE(sat)
*hFE1
*hFE2
*hFE3
*hFE4
Cob
Min.
-400
-400
-6
-
-
-
-
-
-
-
50
75
60
40
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
4
Max.
-
-
-
-100
-100
-500
-200
-300
-600
-900
-
200
-
-
6
Unit
V
V
V
nA
nA
nA
mV
mV
mV
mV
Test Conditions
IC=-100uA, IE=0
IC=-1mA, IB=0
IE=-10uA, IC=0
VCB=-400V, IE=0
VEB=-6V, IC=0
VCE=-400V, VBE=0
IC=-1mA, IB=-0.1mA
IC=-10mA, IB=-1mA
IC=-50mA, IB=-5mA
IC=-10mA, IB=-1mA
VCE=-10V, IC=-1mA
VCE=-10V, IC=-10mA
VCE=-10V, IC=-50mA
VCE=-10V, IC=-100mA
VCE=-10V, f=1MHz
*Pulse Test: Pulse Width
≤
380us, Duty Cycle
≤
2%
pF
SOT-23
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