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參數(shù)資料
| 型號(hào)： | HM67S36130 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | 4M Synchronous Fast Static RAM (128k-words ×36-bits)(4M同步快速靜態(tài)RAM(128k字 ×36位)) |
| 中文描述： | 4分同步快速靜態(tài)存儲(chǔ)器（128K的，字× 36位）（4分同步快速靜態(tài)隨機(jī)存儲(chǔ)器（128K的字× 36位）） |
| 文件頁數(shù)： | 6/25頁 |
| 文件大?。?/td> | 191K |
| 代理商： | HM67S36130 |
HM67S36130 Series
6
Absolute Maximum Ratings
Parameter
Symbol
Value
Unit
Note
Supply voltage
V
DD
V
DDQ
V
IN
Ta
–0.5 to +4.6
V
1
Output Supply Voltage
–0.5 to V
DD
+0.5
–0.5 to V
DD
+0.5
0 to 70 (Tj max = 110)
V
1, 4
Voltage on any pin
V
1, 4
Operating Temperature
°
C
°
C
Storage Temperature
Tstg (bias)
–55 to 125
Input Latchup Current
I
LI
Iout
±
200
±
25
mA
Output Current per pin
Notes: 1. All voltage are referenced to V
SS
.
2. Permanent device damage may occur if Absolute Maximum Ratings are exceeded. Functional
operation should be restricted the Operation Conditions. Exposure to higher than recommended
voltages for extended periods of time could affect device reliability.
3. These Bi-CMOS memory circuits have been designed to meet the DC and AC specifications
shown in the tables after thermal equilibrium has been established.
4. Not exceed 4.6 V
5. Power Up Initialization
The following supply voltage application sequence is recommended: V
SS
, V
DD
then V
DDQ
.
Remember according to the Absolute Maximum Ratings table, V
DDQ
is not to exceed V
DD
+ 0.5 V,
whatever the instantaneous value of V
DD
.
mA
Recommended DC Operating Conditions
(Ta = 0 to 70
°
C [Tj max = 110
°
C])
Parameter
Symbol
Min
Typ
Max
Unit
Notes
Supply voltage
V
DD
V
DDQ
3.135
3.3
3.465
V
Output Supply voltage
3.135
3.3
3.465
V
1
2.375
2.5
2.75
V
2
Input voltage Logic High Level
V
IH
V
IL
V
IH
V
IL
V
IH
(PECL)
V
IL
(PECL)
2.0
—
V
DDQ
+ 0.3
0.8
V
1
Logic Low Level
–0.5
—
V
1
Logic High Level
1.85
—
V
DDQ
+ 0.3
1.15
V
2
Logic Low Level
–0.5
—
V
2
PECL Logic High Level
2.135
—
2.420
V
PECL Logic Low Level
Notes: 1. For V
DDQ
= 3.3 V supply.
2. For V
DDQ
= 2.5 V supply.
1.490
—
1.825
V
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