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參數(shù)資料
| 型號(hào)： | HM669A |
| 廠商： | HSMC CORP. |
| 英文描述： | NPN EPITAXIAL PLANAR TRANSISTOR |
| 中文描述： | 瑞展晶體管 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 53K |
| 代理商： | HM669A |
HI-SINCERITY
MICROELECTRONICS CORP.
HM669A
NPN EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HM200205
Issued Date : 1995.12.18
Revised Date : 2004.09.16
Page No. : 1/4
HM669A
HSMC Product Specification
Description
Low frequency power amplifier complementary pair with HM649A
Absolute Maximum Ratings
(T
A
=25
°
C)
Maximum Temperatures
Storage Temperature........................................................................................................................... -55 ~ +150
°
C
Junction Temperature....................................................................................................................+150
°
C Maximum
Maximum Power Dissipation
Total Power Dissipation (T
A
=25
°
C)...................................................................................................................... 1 W
Total Power Dissipation (T
C
=25
°
C).................................................................................................................... 10 W
Maximum Voltages and Currents
BV
CBO
Collector to Base Voltage....................................................................................................................... 180 V
BV
CEO
Collector to Emitter Voltage.................................................................................................................... 160 V
BV
Emitter to Base Voltage.............................................................................................................................. 5 V
I
C
Collector Current (DC) ................................................................................................................................... 1.5 A
I
C
Collector Current (Pulse) ................................................................................................................................... 3 A
Thermal Characteristic
Symbol
Characteristic
Max.
Unit
R
θ
ja
R
θ
jc
Thermal Resistance, junction to ambient (T
A
=25
o
C)
Thermal Resistance, junction to case (T
C
=25
o
C)
125
o
C/W
12.5
o
C/W
Electrical Characteristics
(T
A
=25
°
C)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
*V
CE(sat)
V
BE(on)
*h
FE1
*h
FE2
f
T
Min.
180
160
5
-
-
-
100
30
-
Typ.
-
-
-
-
-
-
-
-
140
Max.
-
-
-
10
1
1.5
320
-
-
Unit
V
V
V
uA
V
V
Test Conditions
I
C
=1mA, I
E
=0
I
C
=10mA, I
B
=0
I
E
=1mA, I
C
=0
V
CB
=160V, I
E
=0
I
C
=500mA, I
B
=50mA
I
C
=150mA, V
CE
=5V
I
C
=150mA, V
CE
=5V
I
C
=500mA, V
CE
=5V
I
C
=150mA , V
CE
=5V
MHz
*Pulse Test: Pulse Width
≤
380us, Duty Cycle
≤
2%
Classification Of hFE1
Rank
Range
C
D
100-200
180-320
SOT-89
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