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參數(shù)資料
| 型號： | HM64 |
| 廠商： | HSMC CORP. |
| 英文描述： | PNP EPITAXIAL PLANAR TRANSISTOR |
| 中文描述： | 進步黨外延平面晶體管 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 30K |
| 代理商： | HM64 |
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE9512
Issued Date : 1996.04.17
Revised Date : 2001.09.20
Page No. : 1/3
HM64
HSMC Product Specification
HM64
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The HM64 is a darlington amplifier transistor designed for
applications requiring extremely high current gain.
Features
High D.C current gain
HM64 is complementary to HM14
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature............................................................................................ -55 ~ +150
°
C
Junction Temperature.................................................................................... +150
°
C Maximum
Maximum Power Dissipation
Total Power Dissipation (Ta=25
°
C)....................................................................................... 1 W
Maximum Voltages and Currents (Ta=25
°
C)
VCBO Collector to Base Voltage........................................................................................ -30 V
VCES Collector to Emitter Voltage ..................................................................................... -30 V
VEBO Emitter to Base Voltage........................................................................................... -10 V
IC Collector Current ...................................................................................................... -300 mA
Characteristics
(Ta=25
°
C)
Symbol
BVCBO
BVCES
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(on)
*hFE1
*hFE2
fT
Min.
-30
-30
-10
-
-
-
-
10
20
125
Typ.
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
-100
-100
-1.5
-2
-
-
-
Unit
V
V
V
nA
nA
V
V
K
K
MHz
Test Conditions
IC=-100uA
IC=-100uA
IE=-10uA
VCB=-30V
VEB=-10V
IC=-100mA, IB=-0.1mA
VCE=-5V, IC=-100mA
VCE=-5V, IC=-10mA
VCE=-5V, IC=-100mA
VCE=-5V, IC=-10mA
*Pulse Test : Pulse Width
≤
380us, Duty Cycle
≤
2%
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