參數(shù)資料
型號(hào): HM62W16255H
廠商: Hitachi,Ltd.
英文描述: 4M High Speed SRAM (256-kword ×16-bit)(4M高速靜態(tài)RAM(256k字 ×16位))
中文描述: 4分高速SRAM(256 - KWord的× 16位)(4分高速靜態(tài)隨機(jī)存儲(chǔ)器(256k字× 16位))
文件頁(yè)數(shù): 18/19頁(yè)
文件大?。?/td> 152K
代理商: HM62W16255H
HM62W16255H Series
18
Revision Record
Rev.
0.0
Date
Feb. 28, 1997
Contents of Modification
Initial issue
Drawn by
Y. Saitoh
Approved by
A. Ide
0.1
Nov. 20, 1997
Change of subtitle
K. Makuta
K. Makuta
0.2
Dec. 5, 1997
Features
Addition of Operating current
Addition of TTL standby current
Addition of CMOS standby current
Addition of Data retention current
Addition of Data retention voltage
Change of Block Diagram
Absolute Maximum Ratings
P
: 1.0/1.5 W to 1.0 W
Change of notes
Recommended DC Operating Conditions
V
IH
(max): V
+ 0.3 V to V
CC
+ 0.5 V
V
(min): –0.3 V to –0.5 V
Change of notes
DC Characteristics
I
CC
(max): 300/270/250 mA to 210/180/150 mA
I
SB
(max): 100/100/100 mA to 60/50/40 mA
I
(max): 10/0.5 mA to 5/1 mA
Test conditions I
CC
and I
: Addition of Min cycle
Test conditions I
SB1
: Addition of f = 0 MHz
AC Characteristics
Change of Output load (A)
t
OE
, t
LB
, t
UB
, t
CHZ
, t
OHZ
, t
LBHZ
and t
(max):
5/6/8 ns to 5/6/7 ns
t
AW
, t
CW
, t
WP
, t
LBW
and t
UBW
(min):
6/8/10 ns to 7/8/10 ns
t
DW
(min): 5/6/8 ns to 5/6/7 ns
t
and t
(max): 5/6/8 ns to 5/6/7 ns
Low V
CC
Data Retention Characteristics
I
: —/2/300
μ
A to —/—/300
μ
A
Change of Low V
CC
Data Retention Timing
Waveform
T. Fukazawa
K. Makuta
0.3
May. 15, 1998
Features
Change of Operating current
Change of TTL standby current
Change of Block Diagram
DC Characteristics
I
CC
(max): 210/180/150 ns to 200/180/160 ns
I
(max): 60/50/40 ns to 70/60/50 ns
Addition of Package Dimensions (TTP-44DE)
T. Fukazawa
K. Makuta
相關(guān)PDF資料
PDF描述
HM62W16256BLTT-5 4 M SRAM (256-kword x 16-bit)
HM62W16256BLTT-5SL RES 100-OHM 1% 0.25W 100PPM THICK-FILM SMD-1206 5K/REEL-7IN-PA
HM62W16256BLTT-7 4 M SRAM (256-kword x 16-bit)
HM62W16256BLTT-7SL 4 M SRAM (256-kword x 16-bit)
HM62W16256B 4 M SRAM (256-kword ×16-bit)(4 M 靜態(tài)RAM(256k字×16位))
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