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參數(shù)資料
| 型號： | HM62W1400H |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | 4M High Speed SRAM (4-Mword ×1-bit)(4M高速靜態(tài)RAM(4M字 ×1位)) |
| 中文描述： | 4分高速SRAM（4 Mword × 1位）（4分高速靜態(tài)隨機存儲器（4分字× 1位）） |
| 文件頁數(shù)： | 10/15頁 |
| 文件大?。?/td> | 335K |
| 代理商： | HM62W1400H |
HM62W1400H Series
10
Write Timing Waveform (2)
(
CS
Controlled)
Address
WE
*
3
Dout
Din
t
WC
t
WP
t
WR
t
CW
t
DW
t
DH
Valid address
t
AW
Valid data
t
AS
CS
*
3
t
WHZ
t
OW
*
4
*
4
High impedance*
5
Low V
CC
Data Retention Characteristics
(Ta = 0 to +70
°
C)
This characteristics is guaranteed only for L-version.
Parameter
Symbol
Min
Typ*
1
Max
Unit
Test conditions
V
≥
CS
≥
V
CC
– 0.2 V
(1) 0 V
≤
Vin
≤
0.2 V or
(2) V
CC
≥
Vin
≥
V
CC
– 0.2 V
V
= 3 V, V
≥
CS
≥
V
CC
– 0.2 V
(1) 0 V
≤
Vin
≤
0.2 V or
(2) V
CC
≥
Vin
≥
V
CC
– 0.2 V
See retention waveform
V
CC
for data retention
V
DR
2.0
—
—
V
Data retention current
I
CCDR
—
40
600
μ
A
Chip deselect to data
retention time
t
CDR
0
—
—
ns
Operation recovery time
Note: 1. Typical values are at V
CC
= 3.0 V, Ta = +25C, and not guaranteed.
t
R
5
—
—
ms
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