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參數(shù)資料
| 型號： | HM62V16258B |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | 4 M SRAM (256-kword ×16-bit)(4M靜態(tài)RAM (256k字 ×16位)) |
| 中文描述： | 四米的SRAM（256 - KWord的× 16位）（4分靜態(tài)隨機存儲器（256k字× 16位）） |
| 文件頁數(shù)： | 17/17頁 |
| 文件大?。?/td> | 74K |
| 代理商： | HM62V16258B |
HM62V16258B Series
17
Revision Record
Rev.
Date
Contents of Modification
Drawn by
Approved by
0.0
Oct. 30, 1998
Initial issue
M.Higuchi
K. Imato
1.0
Mar. 8, 1999
Features: Change of Power dissipation
Active: TBD mW (typ) to 9 mW (typ)
Standby: TBD
μ
W (typ) to 3
μ
W (typ)
DC Characteristics
I
CC2
typ: TBD mA to 3 mA
I
typ: TBD/TBD
μ
A to 1/1
μ
A
AC Characteristics
t
max: 35/45 ns to 40/45 ns
Low V
CC
Data Retention Characteristics
I
typ: —/—
μ
A to 0.8/0.8
μ
A
Change of note1 and 2
Change of Timing Waveform(1) and (2)
M.Higuchi
K. Makuta
2.0
Oct. 14, 1999
Low V
Data Retention Characteristics
Change of Timing Waveform(1) and (2)
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