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參數(shù)資料
| 型號： | HM62V16100LTI-4 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Wide Temperature Range Version |
| 中文描述： | 寬溫版本 |
| 文件頁數(shù)： | 1/25頁 |
| 文件大小： | 215K |
| 代理商： | HM62V16100LTI-4 |
Rev.2.00, Oct.06.2003, page 1 of 23
HM62V16100I Series
Wide Temperature Range Version
16 M SRAM (1-Mword
×
16-bit)
REJ03C0060-0200Z
Rev. 2.00
Oct.06.2003
Description
The HM62V16100I Series is 16-Mbit static RAM organized 1-Mword
×
16-bit. HM62V16100I Series has
realized higher density, higher performance and low power consumption by employing CMOS process
technology (6-transistor memory cell). It offers low power standby power dissipation; therefore, it is
suitable for battery backup systems. It has the package variations of 48-bump chip size package with 0.75
mm bump pitch and 48-pin plastic TSOPI for high density surface mounting.
Features
Single 3.0 V supply: 2.7 V to 3.6 V
Fast access time: 45/55 ns (max)
Power dissipation:
Active: 9 mW/MHz (typ)
Standby: 1.5
μ
W (typ)
Completely static memory.
No clock or timing strobe required
Equal access and cycle times
Common data input and output.
Three state output
Battery backup operation.
2 chip selection for battery backup
Temperature range:
40 to +85
°
C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HM62V16100LTI-4SL | Wide Temperature Range Version |
| HM62V16100LTI-5SL | Wide Temperature Range Version |
| HM62V16256BLTT-7 | 4 M SRAM (256-kword x 16-bit) |
| HM62V16256BLTT-7SL | 4 M SRAM (256-kword x 16-bit) |
| HM62V16256BLTT-8 | 4 M SRAM (256-kword x 16-bit) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HM62V16256CLTT-5SI | 制造商:Hitachi 功能描述: |
| HM62V16258CLTT-5SL | 制造商:Renesas Electronics Corporation 功能描述: |
| HM62V16514LTTI-5SL | 制造商:Renesas Electronics Corporation 功能描述: |
| HM62V8100LTTI-5SL | 制造商:Renesas Electronics Corporation 功能描述:SRAM Chip Async Single 3V 8M-Bit 1M x 8 55ns 44-Pin TSOP-II 制造商:Renesas Electronics 功能描述:8M~8 55ns 3V TSOP 制造商:Renesas Electronics Corporation 功能描述:IC,Memory,SRAM,low power,TSOP4 |
| HM62W16255HCJP12 | 制造商:Renesas Electronics Corporation 功能描述: |
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