參數(shù)資料
型號(hào): HM621664HB
廠商: Hitachi,Ltd.
英文描述: 1 M High Speed SRAM (64-kword ×16-bit)(1 M 高速 SRAM (64k字 ×16位))
中文描述: 高1米高速SRAM(64 KWord的× 16位)(1米高速靜態(tài)存儲(chǔ)器(64K的字× 16位))
文件頁數(shù): 5/16頁
文件大?。?/td> 116K
代理商: HM621664HB
HM621664HB Series
5
DC Characteristics
(Ta = 0 to +70
°
C, V
CC
= 5 V
±
10%, V
SS
= 0 V)
Parameter
Symbol Min
Typ*
1
Max
Unit
Test conditions
Input leakage current
|I
LI
|
|I
LO
|
2
μ
A
μ
A
Vin = V
SS
to V
CC
Vin = V
SS
to V
CC
Output leakage
current*
1
2
Operating power
supply current
15 ns cycle I
CC
160
180
mA
CS
= V
, Iout = 0 mA
Other inputs = V
IH
/V
IL
20 ns cycle I
CC
15 ns cycle I
SB
130
150
Standby power supply
current
55
100
mA
CS
= V
,
Other inputs = V
IH
/V
IL
20 ns cycle I
SB
45
80
I
SB1
2
mA
V
CS
V
CC
– 0.2 V,
(1) 0 V
Vin
0.2 V or
(2) V
CC
Vin
V
CC
– 0.2 V
—*
2
—*
2
0.2*
2
Output voltage
V
OL
V
OH
0.4
V
I
OL
= 8 mA
I
OH
= –4 mA
2.4
V
Note:
1. Typical values are at V
CC
= 5.0 V, Ta = +25
°
C and specified loading.
2. This characteristics is guaranteed only for L-version.
Capacitance
(Ta = 25
°
C, f = 1.0 MHz)
Parameter
Symbol
Min
Typ
Max
Unit
Test conditions
Input capacitance*
1
Cin
6
pF
Vin = 0 V
Input/output capacitance*
1
Note:
1. This parameter is sampled and not 100% tested.
C
I/O
8
pF
V
I/O
= 0 V
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