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參數資料
| 型號： | HM6216255HCTT-10 |
| 廠商： | Hitachi,Ltd. |
| 元件分類： | SRAM |
| 英文描述： | 4M High Speed SRAM (256-kword x 16-bit) |
| 中文描述： | 4分高速SRAM（256 - KWord的x 16位） |
| 文件頁數： | 14/17頁 |
| 文件大?。?/td> | 95K |
| 代理商： | HM6216255HCTT-10 |
HM6216255HC Series
14
Low V
CC
Data Retention Characteristics
(Ta = 0 to +70°C)
This characteristics is guaranteed only for L-version.
Parameter
Symbol
Min
Typ*
1
Max
Unit
Test conditions
V
≥
CS
≥
V
CC
– 0.2 V,
(1) 0 V
≤
Vin
≤
0.2 V or
(2) V
CC
≥
Vin
≥
V
CC
– 0.2 V
V
CC
= 3 V
V
≥
CS
≥
V
CC
– 0.2 V,
(1) 0 V
≤
Vin
≤
0.2 V or
(2) V
CC
≥
Vin
≥
V
CC
– 0.2 V
See retention waveform
V
CC
for data retention
V
DR
2.0
—
—
V
Data retention current
I
CCDR
—
TBD
800
μ
A
Chip deselect to data retention time
t
CDR
t
R
0
—
—
ns
Operation recovery time
Note:
1. Typical values are at V
CC
= 3.0 V, Ta = +25C, and not guaranteed.
5
—
—
ms
Low V
CC
Data Retention Timing Waveform
CC
V
2.2 V
DR
V
4.5 V
0 V
CS
t
CDR
t
R
Data retention mode
V
CC
≥
CS
≥
V
CC
– 0.2 V
相關PDF資料 |
PDF描述 |
|---|---|
| HM6216255HJPI-12 | 4M high Speed SRAM (256-kword x 16-bit) |
| HM6216255HJPI-15 | 4M high Speed SRAM (256-kword x 16-bit) |
| HM6216255HTTI-12 | 4M high Speed SRAM (256-kword x 16-bit) |
| HM6216255HTTI-15 | 4M high Speed SRAM (256-kword x 16-bit) |
| HM6216255HJP-10 | 4M high Speed SRAM (256-kword x 16-bit) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| HM6216255HCTT-12 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Instructions for Using SRAM Devices Technical Update/Device |
| HM6216255HCTTI-12 | 制造商:Renesas Electronics Corporation 功能描述:SRAM Chip Async Single 5V 4M-Bit 256K x 16 12ns 44-Pin TSOP-II |
| HM6216255HI | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:4M high Speed SRAM (256-kword x 16-bit) |
| HM6216255HJP-10 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:4M high Speed SRAM (256-kword x 16-bit) |
| HM6216255HJP-12 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:4M high Speed SRAM (256-kword x 16-bit) |
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