參數(shù)資料
型號(hào): HM514400C
廠商: Hitachi,Ltd.
英文描述: 1,048,576-word X 4-bit Dynamic Random Access Memory
中文描述: 1,048,576字× 4位動(dòng)態(tài)隨機(jī)存取存儲(chǔ)器
文件頁(yè)數(shù): 9/27頁(yè)
文件大?。?/td> 235K
代理商: HM514400C
Read, Write, Read-Modify-Write and Refresh Cycles
(Common parameters)
HM514400B/BL, HM514400C/CL
-6
-7
-8
Parameter
Symbol
Min
Max
Min
Max
Min
Max
Unit
Notes
Random read or write cycle time
RAS
precharge time
RAS
pulse width
CAS
pulse width
t
RC
t
RP
t
RAS
t
CAS
t
ASR
t
RAH
t
ASC
t
CAH
t
RCD
t
RAD
t
RSH
t
CSH
t
CRP
t
ODD
t
DZO
t
DZC
t
T
t
REF
t
REF
110
130
150
ns
40
50
60
ns
60
10000 70
10000 80
10000 ns
19
15
10000 20
10000 20
10000 ns
20
Row address setup time
0
0
0
ns
Row address hold time
10
10
10
ns
Column address setup time
0
0
0
ns
Column address hold time
RAS
to
CAS
delay time
RAS
to column address delay time
RAS
hold time
CAS
hold time
CAS
to
RAS
precharge time
OE
to Din delay time
OE
delay time from Din
CAS
setup time from Din
15
15
15
ns
20
45
20
50
20
60
ns
8
15
30
15
35
15
40
ns
9
15
20
20
ns
60
70
80
ns
10
10
10
ns
15
20
20
ns
0
0
0
ns
0
0
0
ns
Transition time (rise and fall)
3
50
3
50
3
50
ns
7
Refresh period
16
16
16
ms
Refresh period (L-version)
128
128
128
ms
9
HM514400B/BL, HM514400C/CL Series
相關(guān)PDF資料
PDF描述
HM514400CL 1,048,576-word X 4-bit Dynamic Random Access Memory
HM5164165F 64M EDO DRAM (4-Mword x 16-bit) 8k refresh/4k refresh
HM5164165FJ-5 64M EDO DRAM (4-Mword x 16-bit) 8k refresh/4k refresh
HM5164165FJ-6 64M EDO DRAM (4-Mword x 16-bit) 8k refresh/4k refresh
HM5164165FLJ-5 64M EDO DRAM (4-Mword x 16-bit) 8k refresh/4k refresh
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HM514400CL 制造商:HITACHI 制造商全稱(chēng):Hitachi Semiconductor 功能描述:1,048,576-word X 4-bit Dynamic Random Access Memory
HM514400CLS-6 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:x4 Fast Page Mode DRAM
HM514400CLS-7 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:x4 Fast Page Mode DRAM
HM514400CLS-8 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:x4 Fast Page Mode DRAM
HM514400CLTT-6 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:x4 Fast Page Mode DRAM