參數(shù)資料
型號(hào): HM5117805TT-5
廠商: ELPIDA MEMORY INC
元件分類(lèi): DRAM
英文描述: 16 M EDO DRAM (2-Mword X 8-bit) 2 k Refresh
中文描述: 2M X 8 EDO DRAM, 50 ns, PDSO28
封裝: 0.400 INCH, PLASTIC, TSOP2-28
文件頁(yè)數(shù): 30/32頁(yè)
文件大?。?/td> 549K
代理商: HM5117805TT-5
EO rdc
HM5117805 Series
Data Sheet E0156H10
30
HM5117805TT/LTT Series
(TTP-28DA)
1.27
0.21
M
0.42
±
0.08
0.40
±
0.06
0.10
1
18.41
18.81 Max
15
14
28
1
1
0
°
– 5
°
0
±
11.76
±
0.20
0.50
±
0.10
1.15 Max
0
±
0
0.80
Hitachi Code
JEDEC
EIAJ
Weight
(reference value)
TTP-28DA
Conforms
0.43 g
0
±
Unit: mm
Dimension including the plating thickness
Base material dimension
相關(guān)PDF資料
PDF描述
HM5117805TT-6 16 M EDO DRAM (2-Mword X 8-bit) 2 k Refresh
HM5117805TT-7 16 M EDO DRAM (2-Mword X 8-bit) 2 k Refresh
HM5117805LTT-5 16 M EDO DRAM (2-Mword X 8-bit) 2 k Refresh
HM5117805 16 M EDO DRAM (2-Mword X 8-bit) 2 k Refresh
HM5117805LTS-5 16 M EDO DRAM (2-Mword X 8-bit) 2 k Refresh
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HM5117805TT-6 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:16 M EDO DRAM (2-Mword X 8-bit) 2 k Refresh
HM5117805TT-7 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:16 M EDO DRAM (2-Mword X 8-bit) 2 k Refresh
HM51180J 制造商:TT Electronics / BI Technologies 功能描述:Inductor Power Wirewound 18uH 5% 1KHz 4.7A 23mOhm DCR AXL 制造商:TT Electronics / BI Technologies 功能描述:Ind Power Wirewound 18uH 5% 1KHz 4.7A AXL
HM51-180JLF 制造商:BITECH 制造商全稱:Bi technologies 功能描述:Axially Leaded Miniature Power Inductors
HM51180K 制造商:TT Electronics / BI Technologies 功能描述:Ind Power Wirewound 18uH 10% 1KHz 4.7A AXL