參數(shù)資料
型號(hào): HM5116100S-7
廠商: Hitachi,Ltd.
英文描述: 16M FP DRAM (16-Mword x 1-bit) 4k Refresh
中文描述: 1,600計(jì)劃生育的DRAM(16 Mword × 1位)4K的刷新
文件頁(yè)數(shù): 7/24頁(yè)
文件大?。?/td> 217K
代理商: HM5116100S-7
HM5116100 Series
7
Read Cycle
HM5116100
-6
-7
Parameter
Access time from
RAS
Access time from
CAS
Symbol
Min
Max
Min
Max
Unit
Notes
t
RAC
t
CAC
t
AA
t
RCS
t
RCH
t
RRH
t
RAL
t
CAL
t
CLZ
t
OH
t
OFF
60
70
ns
6, 7, 17
15
18
ns
7, 8, 15, 17
Access time from address
30
35
ns
7, 9, 15, 17
Read command setup time
Read command hold time to
CAS
Read command hold time to
RAS
Column address to
RAS
lead time
Column address to
CAS
lead time
CAS
to output in low-Z
0
0
ns
0
0
ns
10
0
0
ns
10
30
35
ns
30
35
ns
0
0
ns
Output data hold time
3
3
ns
Output buffer turn-off time
15
15
ns
11
Write Cycle
HM5116100
-6
-7
Parameter
Symbol
Min
Max
Min
Max
Unit
Notes
Write command setup time
t
WCS
t
WCH
t
WP
t
RWL
t
CWL
t
DS
t
DH
0
0
ns
12
Write command hold time
10
15
ns
Write command pulse width
Write command to
RAS
lead time
Write command to
CAS
lead time
10
10
ns
15
18
ns
15
18
ns
Data-in setup time
0
0
ns
13
Data-in hold time
10
15
ns
13
相關(guān)PDF資料
PDF描述
HM5117805J-5 16M EDO DRAM(2-Mword*8-bit) 2k Refresh
HM5117805J-6 16M EDO DRAM(2-Mword*8-bit) 2k Refresh
HM5117805J-7 16 M EDO DRAM(2-Mword*8-bit) 2 k Refresh
HM5117805LJ-5 16 M EDO DRAM (2-Mword X 8-bit) 2 k Refresh
HM5117805LS-5 16 M EDO DRAM (2-Mword X 8-bit) 2 k Refresh
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HM5116100Z-10 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x1 Fast Page Mode DRAM
HM5116100Z-6 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x1 Fast Page Mode DRAM
HM5116100Z-7 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x1 Fast Page Mode DRAM
HM5116100Z-8 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x1 Fast Page Mode DRAM
HM5116160J-5 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:1048576-word x 16-bit Dynamic RAM