參數(shù)資料
型號(hào): HM14
廠商: HSMC CORP.
英文描述: NPN EPITAXIAL PLANAR TRANSISTOR
中文描述: 瑞展晶體管
文件頁(yè)數(shù): 1/3頁(yè)
文件大小: 31K
代理商: HM14
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. :HE5908-B
Issued Date : 1998.04.09
Revised Date : 2000.10.01
Page No. : 1/3
HSMC Product Specification
HM14
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HM14 is a darlington amplifier transistor designed for
applications requiring extremely high current gain.
Features
High D.C current gain
HM14 is complementary to HM64
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature............................................................................................ -55 ~ +150
°
C
Junction Temperature................................................................................... +150
°
C Maximum
Maximum Power Dissipation
Total Power Dissipation (Ta=25
°
C)...................................................................................... 1 W
Maximum Voltages and Currents (Ta=25
°
C)
VCBO Collector to Base Voltage ........................................................................................ 30 V
VCES Collector to Emitter Voltage...................................................................................... 30 V
VEBO Emitter to Base Voltage ........................................................................................... 10 V
IC Collector Current....................................................................................................... 300 mA
Characteristics
(Ta=25
°
C)
Symbol
BVCBO
BVCES
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(on)
*hFE1
*hFE2
fT
Min.
30
30
10
-
-
-
-
10K
20K
125
Typ.
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
100
100
1.5
2
-
-
-
Unit
V
V
V
nA
nA
V
V
Test Conditions
IC=100uA, IE=0
IC=100uA, IB=0
IE=10uA, IC=0
VCB=30V, IE=0
VEB=10V, IC=0
IC=100mA, IB=0.1mA
VCE=5V, IC=100mA
VCE=5V, IC=10mA
VCE=5V, IC=100mA
VCE=5V, IC=10mA, f=100MHz
*Pulse Test : Pulse Width
380us, Duty Cycle
2%
MHz
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