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參數(shù)資料
| 型號(hào)： | HM1300 |
| 廠商： | HSMC CORP. |
| 英文描述： | SILICON PNP EPITAXIAL TYPE |
| 中文描述： | 硅外延式進(jìn)步黨 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 33K |
| 代理商： | HM1300 |
HI-SINCERITY
MICROELECTRONICS CORP.
HM1300
SILICON PNP EPITAXIAL TYPE
Spec. No. : HM200202
Issued Date : 2002.02.01
Revised Date : 2002.08.15
Page No. : 1/3
HM1300
HSMC Product Specification
Description
Strobo Flash Applications
Medium Power Amplifier Applications
Features
High DC Current Ogin and Excellanr hFE Linearity
hFE(1)=140-1000, (VCE=-1V, IC=-0.5A)
hFE(2)=60(Min.), (VCE=-1V, IC=-2A)
Low Saturation Voltage
VCE(sat)=-0.5V(Max.), (IC=-2A, IE=-50mA)
Absolute Maximum Ratings
(Ta=25
°
C)
Characteristic
Symbol
VCBO
VCES
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Ratios
-20
-20
-10
-6
-2
-5
-0.2
1
150
-53~150
Unit
V
Collector-Base Voltage
Collector-Emitter Voltage
V
Emitter-Base Voltage
V
DC
Pulsed
(Note1)
Collector Current
A
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Note 1: Pulse Width=10ms (Max.), Duty Cycle=30%(Max.)
A
W
°
C
°
C
Electrical Characteristics
(Ta=25
°
C)
Characteristic
Symbol
Test Condition
VCE=-20V, IE=0
VBE=-6V, IC=0
IC=10mA, IB=0
IE=-1mA, IC=0
VCE=-1V, IC=-0.5A
VCE=-1V, IC=-2A
IC=-2A, IB=-50mA
VCE=-1V, IC=-2A
VCE=-1V, IC=-0.5A
VCE=-10V, IE=0,
F=1KHz
Min.
-
-
-10
-6
140
60
-
-
-
Typ. Max. Unit
-
-100
-
-100
-
-
-
-
-
1000
-
-
-0.3
-0.5
-0.83 -1.5
140
-
Collector Cut-off Current
Emitter Cut-off Current
Collector – Emitter Breakdown Voltage V(BR)CEO
Emitter – Base Breakdown Voltage
ICBO
IEBO
nA
nA
V
V
V(BR)EBO
hFE(1)
(Note2)
hFE(2)
*DC Current Gain
*Collector – Emitter Saturation Voltage VCE(sat)
Base – Emitter Voltage
Cutoff Frequency
V
V
VBE
FT
MHz
Collector Output Capacitance
Cob
-
50
-
pF
Note 2: hFE(1) Classification Y:140~280, GR:200~400, BL:300~600, PE:500~1000
*Pulse Test: Pulse Width
≤
380us, Duty Cycle
≤
2%
SOT-89
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