參數(shù)資料
型號: HLMP-RB11-D00DD
英文描述: HLMP-RB11 4mm Oval Precision Optical Performance Best Value InGaN LED Lamps
中文描述: HLMP - RB11 4mm的橢圓形精密光學(xué)性能最佳價(jià)值的InGaN LED燈具
文件頁數(shù): 3/7頁
文件大小: 183K
代理商: HLMP-RB11-D00DD
3
Absolute Maximum Ratings at T
A
= 25
°
C
Peak Forward Current
[1,2]
.................................................................................................................... 300 mA
Average Forward Current
[2]
................................................................................................................... 20 mA
DC Current
[3]
......................................................................................................................................... 30 mA
Power Dissipation ................................................................................................................................. 87 mW
Reverse Voltage (I
R
= 100
μ
A).................................................................................................................... 5 V
Transient Forward Current (10
μ
s Pulse)
[4]
......................................................................................... 500 mA
LED Junction Temperature ..................................................................................................................... 110
°
C
Operating Temperature Range ................................................................................................... -20 to +100
°
C
Storage Temperature Range....................................................................................................... -55 to +100
°
C
Lead Soldering Temperature [1.6 mm (0.063 in.) from body]........................................... 260
°
C for 5 seconds
Notes:
1. Maximum I
PEAK
at f = 1 kHz, DF = 6.7%.
2. Refer to Figure 6 to establish pulsed operating conditions.
3. Derate linearly as shown in Figure 5.
4. The transient peak current is the maximum non-recurring peak current the device can withstand without damaging the LED die and
wire bonds. It is not recommended that the device be operated at peak currents beyond the Absolute Maximum Peak Forward Current.
Electrical/Optical Characteristics at T
A
= 25
°
C
Symbol
Description
V
F
Forward Voltage
V
R
Reverse Breakdown Voltage
λ
p
Peak Wavelength
λ
d
Dominant Wavelength
λ
1
/
2
Spectral Line Halfwidth
τ
S
Speed of Response
Min.
Typ.
1.8
15.0
645
637
20
30
Max.
2.2
Unit
V
V
nm
nm
nm
ns
Test Condition
I
F
= 20 mA
I
R
= 100
μ
A
Measurement at Peak
Note 1
5.0
Exponential Time
Constant, e
-t
/T
S
V
F
= 0, f = 1 MHz
Junction to Cathode Lead
C
Capacitance
Thermal Resistance
30
pF
°
C/W
R
θ
J-PIN
260
[3]
210
[4]
290
[5]
80
η
V
Luminous Efficacy
Im/W
Note 2
Notes:
1. The dominant wavelength,
λ
d
, is derived from the CIE chromaticity diagram and represents the color of the device.
2. The radiant intensity, I
e
, in watts per steradian, may be found from the equation I
e
= l
V
/
η
V
, where I
V
is the luminous intensity in
candelas and
η
V
is luminous efficacy in lumens/watt.
3. HLMP-D101.
4. HLMP-D105.
5. HLMP-K101/-K105.
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