參數(shù)資料
型號： HLB121I
廠商： HSMC CORP.
英文描述： NPN TRIPLE DIFFUSED PLANAR TYPE HIGH VOLTAGE TRANSISTOR
中文描述： npn型三重擴(kuò)散平面型高壓晶體管
文件頁數(shù)： 1/4頁
文件大?。?/td> 44K
代理商： HLB121I
HI-SINCERITY
MICROELECTRONICS CORP.
HLB121I
NPN Triple Diffused Planar Type High Voltage Transistor
Spec. No. : HE9027
Issued Date : 1996.11.06
Revised Date : 2004.09.24
Page No. : 1/4
HLB121I
HSMC Product Specification
Description
The HLB121I is a medium power transistor designed for use in switching
applications.
Features
High breakdown voltage
Low collector saturation voltage
Fast switching speed
Absolute Maximum Ratings
(T
A
=25
°
C)
Maximum Temperatures
Storage Temperature........................................................................................................................... -55 ~ +150
°
C
Junction Temperature.................................................................................................................................... +150
°
C
Maximum Power Dissipation
Total Power Dissipation (T
C
=25
°
C).................................................................................................................... 10 W
Maximum Voltages and Currents
BV
CBO
Collector to Base Voltage....................................................................................................................... 600 V
BV
CEO
Collector to Emitter Voltage.................................................................................................................... 400 V
BV
Emitter to Base Voltage.............................................................................................................................. 6 V
I
C
Collector Current (DC) ............................................................................................................................... 300 mA
I
C
Collector Current (Pulse)............................................................................................................................ 600 mA
I
B
Base Current (DC)........................................................................................................................................ 40 mA
I
B
Base Current (Pulse).................................................................................................................................. 100 mA
Electrical Characteristics
(T
A
=25
°
C)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
CEO
I
EBO
*V
CE(sat)1
*V
CE(sat)2
*V
BE(sat)
*h
FE1
*h
FE2
Min.
600
400
6
-
-
-
-
-
-
8
10
Typ.
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
10
10
10
400
750
1
-
36
Unit
V
V
V
uA
uA
uA
mV
mV
V
Test Conditions
I
C
=100uA
I
C
=10mA
I
E
=10uA
V
CB
=550V
V
CB
=400V
V
EB
=6V
I
C
=50mA, I
B
=10mA
I
C
=100mA, I
B
=20mA
I
C
=50mA, I
B
=10mA
V
CE
=10V, I
C
=10mA
V
CE
=10V, I
C
=50mA
*Pulse Test: Pulse Width
≤
380us, Duty Cycle
≤
2%
TO-251
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HLB121J 制造商:HSMC 制造商全稱:HSMC 功能描述:NPN Triple Diffused Planar Type High Voltage Transistor
HLB122 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:NPN TRIPLE DIFFUSED PLANAR TYPE HIGH VOLTAGE TRANSISTOR
HLB122D 制造商:HSMC 制造商全稱:HSMC 功能描述:NPN Triple Diffused Planar Type High Voltage Transistor
HLB122I 制造商:HSMC 制造商全稱:HSMC 功能描述:NPN Triple Diffused Planar Type High Voltage Transistors
HLB122J 制造商:HSMC 制造商全稱:HSMC 功能描述:NPN Triple Diffused Planar Type High Voltage Transistor
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