參數(shù)資料
型號： HIRF740F
廠商： HSMC CORP.
英文描述： N-Channel Power MOSFET (400V, 10A)
中文描述： N溝道功率MOSFET（為400V，10A條）
文件頁數(shù)： 2/4頁
文件大?。?/td> 60K
代理商： HIRF740F
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200512
Issued Date : 2005.09.01
Revised Date : 2005.09.22
Page No. : 2/4
HIRF740, HIRF740F
HSMC Product Specification
ELectrical Characteristics
(T
j
=25
°
C, unless otherwise specified)
Symbol
V
(BR)DSS
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient (Reference to 25
o
C, I
D
=1mA)
Drain-Source Leakage Current (V
DS
=400V, V
GS
=0V)
I
DSS
Drain-Source Leakage Current (V
DS
=320V, V
GS
=0V, T
j
=125
°
C)
I
GSSF
Gate-Source Leakage Current-Forward (V
gsf
=20V, V
DS
=0V)
I
GSSR
Gate-Source Leakage Current-Reverse (V
gsr
=-20V, V
DS
=0V)
V
GS(th)
Gate Threshold Voltage (V
DS
=V
GS
, I
D
=250uA)
R
DS(on)
Static Drain-Source On-Resistance (V
GS
=10V, I
D
=6A)
*4
g
FS
Forward Transconductance (V
DS
=50V, I
D
=6A)
*4
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
t
d(on)
Turn-on Delay Time
t
r
Rise Time
t
d(off)
Turn-off Delay Time
t
f
Fall Time
Q
g
Total Gate Charge
Q
gs
Gate-Source Charge
Q
gd
Gate-Drain Charge
Internal Drain Inductance (Measured from the drain lead 0.25” from
package to center of die)
Internal Source Inductance (Measured from the drain lead 0.25” from
package to source bond pad)
Characteristic
Min.
400
-
Typ.
-
0.49
Max.
-
-
Unit
V
V/
o
C
Drain-Source Breakdown Voltage (V
GS
=0V, I
D
=250uA)
-
-
25
250
uA
uA
-
-
2
-
-
-
-
-
100
-100
4
0.55
nA
nA
V
S
5.8
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
1400
330
120
14
27
50
24
-
-
-
V
DS
=25V, V
GS
=0V, f=1MHz
pF
(V
DD
=200V, I
D
=10A, R
G
=9.1
,
R
D
=20
)
*4
ns
63
9
32
(V
DS
=320V, I
D
=10A, V
GS
=10V)
*4
nC
L
D
-
4.5
-
nH
L
S
-
7.5
-
nH
*4: Pulse Test: Pulse Width
≤
300us, Duty Cycle
≤
2%
Source-Drain Diode
Symbol
Characteristic
Min.
Typ.
Max.
Units
I
S
Continuous Source Current (Body
Diode)
-
-
10
A
I
SM
Pulsed Source Current (Body
Diode)
*1
MOSFET symbol
showing the
integral reverse P-
N junction diode
G
D
S
-
-
40
A
t
rr
Q
rr
V
SD
t
on
Reverse Recovery Time
Reverse Recovery Charge
-
-
370
3.8
790
8.2
ns
uC
I
F
=10A, d
i
/d
t
=100A/us, T
J
=25
°
C
*4
Diode Forward Voltage
Forward Turn-On Time
I
S
=10A, V
GS
=0V, T
J
=25
°
C (*4)
-
-
-
2
-
V
**
**: Negligible, Dominated by circuit inductance
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