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參數(shù)資料
| 型號(hào)： | HIP6603ACB |
| 廠商： | INTERSIL CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Synchronous Rectified Buck MOSFET Drivers |
| 中文描述： | 0.73 A HALF BRDG BASED MOSFET DRIVER, PDSO8 |
| 封裝： | PLASTIC, MS-012AA, SOIC-8 |
| 文件頁數(shù)： | 9/11頁 |
| 文件大小： | 516K |
| 代理商： | HIP6603ACB |
9
HIP6601A, HIP6603A, HIP6604
Small Outline Exposed Pad Plastic Packages (EPSOIC)
INDEX
AREA
E
D
N
1
2
3
-B-
0.25(0.010)
C A
M
B S
e
-A-
L
B
M
-C-
A1
A
SEATING PLANE
0.10(0.004)
h x 45
o
C
H
μ
α
0.25(0.010)
B
M
M
P1
1
2
3
P
BOTTOM VIEW
N
TOP VIEW
SIDE VIEW
M8.15B
8 LEAD NARROW BODY SMALL OUTLINE EXPOSED PAD
PLASTIC PACKAGE
SYMBOL
INCHES
MILLIMETERS
NOTES
MIN
MAX
MIN
MAX
A
0.056
0.066
1.43
1.68
-
A1
0.001
0.005
0.03
0.13
-
B
0.0138
0.0192
0.35
0.49
9
C
0.0075
0.0098
0.19
0.25
-
D
0.189
0.196
4.80
4.98
3
E
0.150
0.157
3.31
3.39
4
e
0.050 BSC
1.27 BSC
-
H
0.230
0.244
5.84
6.20
-
h
0.010
0.016
0.25
0.41
5
L
0.016
0.035
0.41
0.64
6
N
α
P
8
8
7
0
o
8
o
0
o
8
o
-
-
0.090
-
2.286
11
P1
-
0.090
-
2.286
11
Rev. 0 6/00
NOTES:
1. Symbols are defined in the “MO Series Symbol List” in
Section 2.2 of Publication Number 95.
2. Dimensioning and tolerancing per ANSI Y14.5M
-
1982.
3. Dimension “D” does not include mold flash, protrusions or
gate burrs. Mold flash, protrusion and gate burrs shall not
exceed 0.15mm (0.006 inch) per side.
4. Dimension “E” does not include interlead flash or protrusions.
Interlead flash and protrusions shall not exceed 0.25mm
(0.010 inch) per side.
5. The chamfer on the body is optional. If it is not present, a
visual index feature must be located within the crosshatched
area.
6. “L” is the length of terminal for soldering to a substrate.
7. “N” is the number of terminal positions.
8. Terminal numbers are shown for reference only.
9. The lead width “B”, as measured 0.36mm (0.014 inch) or
greater above the seating plane, shall not exceed a
maximum value of 0.61mm (0.024 inch).
10. Controlling dimension: MILLIMETER. Converted inch
dimensions are not necessarily exact.
11. Dimensions “P” and “P1” are thermal and/or electrical
enhanced variations. Values shown are maximum size of
exposed pad within lead count and body size.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HIP6603CB | FPGA 1600000 SYSTEM GATE 1.8 VOLT - NOT RECOMMENDED for NEW DESIGN |
| HIP6603ECB | FPGA 1600000 SYSTEM GATE 1.8 VOLT - NOT RECOMMENDED for NEW DESIGN |
| HIP6604 | FPGA 1600000 SYSTEM GATE 1.8 VOLT - NOT RECOMMENDED for NEW DESIGN |
| HIP6604CR | Synchronous Rectified Buck MOSFET Drivers |
| HIP6604CR-T | Synchronous Rectified Buck MOSFET Drivers |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HIP6603ACB-T | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Synchronous Rectified Buck MOSFET Drivers |
| HIP6603B | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Synchronous Rectified Buck MOSFET Drivers |
| HIP6603BCB | 功能描述:IC DRIVER MOSFET SYNC BUCK 8SOIC RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:50 系列:- 配置:低端 輸入類型:非反相 延遲時(shí)間:40ns 電流 - 峰:9A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動(dòng)）:- 電源電壓:4.5 V ~ 35 V 工作溫度:-40°C ~ 125°C 安裝類型:表面貼裝 封裝/外殼:TO-263-6，D²Pak（5 引線+接片），TO-263BA 供應(yīng)商設(shè)備封裝:TO-263 包裝:管件 |
| HIP6603BCB-T | 功能描述:IC DRIVER MOSFET SYNC BUCK 8SOIC RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:50 系列:- 配置:低端 輸入類型:非反相 延遲時(shí)間:40ns 電流 - 峰:9A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動(dòng)）:- 電源電壓:4.5 V ~ 35 V 工作溫度:-40°C ~ 125°C 安裝類型:表面貼裝 封裝/外殼:TO-263-6，D²Pak（5 引線+接片），TO-263BA 供應(yīng)商設(shè)備封裝:TO-263 包裝:管件 |
| HIP6603BCBZ | 功能描述:功率驅(qū)動(dòng)器IC SYNCHCT BUCK MSFT DRVR FLEXIBLE G RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
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