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參數(shù)資料
| 型號： | HIP6601BECB-T |
| 廠商： | INTERSIL CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | CONNECTOR |
| 中文描述： | 0.73 A HALF BRDG BASED MOSFET DRIVER, PDSO8 |
| 封裝： | PLASTIC, EPSOIC-8 |
| 文件頁數(shù)： | 1/11頁 |
| 文件大小： | 346K |
| 代理商： | HIP6601BECB-T |
1
FN9072.7
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 1-888-468-3774
Intersil (and design) is a registered trademark of Intersil Americas Inc.
Copyright Intersil Americas Inc. 2002-2005. All Rights Reserved.
All other trademarks mentioned are the property of their respective owners.
HIP6601B, HIP6603B, HIP6604B
Synchronous Rectified Buck
MOSFET Drivers
The HIP6601B, HIP6603B and HIP6604B are high-
frequency, dual MOSFET drivers specifically designed to
drive two power N-Channel MOSFETs in a synchronous
rectified buck converter topology. These drivers combined
with a HIP63xx or the ISL65xx series of Multi-Phase Buck
PWM controllers and MOSFETs form a complete core-
voltage regulator solution for advanced microprocessors.
The HIP6601B drives the lower gate in a synchronous
rectifier to 12V, while the upper gate can be independently
driven over a range from 5V to 12V. The HIP6603B drives
both upper and lower gates over a range of 5V to 12V. This
drive-voltage flexibility provides the advantage of optimizing
applications involving trade-offs between switching losses
and conduction losses. The HIP6604B can be configured as
either a HIP6601B or a HIP6603B.
The output drivers in the HIP6601B, HIP6603B and
HIP6604B have the capacity to efficiently switch power
MOSFETs at frequencies up to 2MHz. Each driver is
capable of driving a 3000pF load with a 30ns propagation
delay and 50ns transition time. These products implement
bootstrapping on the upper gate with only an external
capacitor required. This reduces implementation complexity
and allows the use of higher performance, cost effective,
N-Channel MOSFETs. Adaptive shoot-through protection is
integrated to prevent both MOSFETs from conducting
simultaneously.
Features
Drives Two N-Channel MOSFETs
Adaptive Shoot-Through Protection
Internal Bootstrap Device
Supports High Switching Frequency
- Fast Output Rise Time
- Propagation Delay 30ns
Small 8 LD SOIC and EPSOIC and 16 LD QFN Packages
Dual Gate-Drive Voltages for Optimal Efficiency
Three-State Input for Output Stage Shutdown
Supply Undervoltage Protection
QFN Package
- Compliant to JEDEC PUB95 MO-220 QFN—Quad Flat
No Leads—Product Outline.
- Near Chip-Scale Package Footprint; Improves PCB
Efficiency and Thinner in Profile.
Applications
Core Voltage Supplies for Intel Pentium III, AMD
Athlon Microprocessors
High Frequency Low Profile DC-DC Converters
High Current Low Voltage DC-DC Converters
Related Literature
Technical Brief TB363,
Guidelines for Handling and
Processing Moisture Sensitive Surface Mount Devices
(SMDs)
Data Sheet
July 20, 2005
NOT RECOMMENDED FOR NEW DESIGNS
INTERSIL RECOMMENDS:
ISL6612, IISL6614, ISL6614A
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HIP6601BECBZ | 功能描述:功率驅(qū)動器IC SYNCHRONUSCTIFIED BUCK MSFT DRVR RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| HIP6601BECBZA | 功能描述:功率驅(qū)動器IC W/ANNEAL SYNCHRONUSC BUCK MSFT DRVR RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| HIP6601BECBZA-T | 功能描述:功率驅(qū)動器IC W/ANNEAL SYNCHRONUSC BUCK MSFT DRVR RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| HIP6601BECBZ-T | 功能描述:功率驅(qū)動器IC SYNCHRONUSCTIFIED BUCK MSFT DRVR RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| HIP6601CB | 制造商:Rochester Electronics LLC 功能描述:SYNCHRONUS-RECTIFIED BUCK MOSFET DRIVER - Bulk |
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