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參數(shù)資料
| 型號(hào)： | HIP6301EVAL1 |
| 廠(chǎng)商： | Intersil Corporation |
| 英文描述： | Microprocessor CORE Voltage Regulator Multi-Phase Buck PWM Controller |
| 中文描述： | 微處理器核心電壓調(diào)節(jié)器的多相降壓PWM控制器 |
| 文件頁(yè)數(shù)： | 15/16頁(yè) |
| 文件大?。?/td> | 191K |
| 代理商： | HIP6301EVAL1 |
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inductance could increase the power dissipated in the
MOSFETs by 30%.
Input Capacitor Selection
The important parameters for the bulk input capacitors are
the voltage rating and the RMS current rating. For reliable
operation, select bulk input capacitors with voltage and
current ratings above the maximum input voltage and largest
RMS current required by the circuit. The capacitor voltage
rating should be at least 1.25 times greater than the
maximum input voltage and a voltage rating of 1.5 times is a
conservative guideline. The RMS current required for a
multi-phase converter can be approximated with the aid of
Figure 13.
First determine the operating duty ratio as the ratio of the
output voltage divided by the input voltage. Find the Current
Multiplier from the curve with the appropriate power
channels. Multiply the current multiplier by the full load
output current. The resulting value is the RMS current rating
required by the input capacitor.
Use a mix of input bypass capacitors to control the voltage
overshoot across the MOSFETs. Use ceramic capacitance for
the high frequency decoupling and bulk capacitors to supply
the RMS current. Small ceramic capacitors should be placed
very close to the drain of the upper MOSFET to suppress the
voltage induced in the parasitic circuit impedances.
For bulk capacitance, several electrolytic capacitors
(Panasonic HFQ series or Nichicon PL series or Sanyo
MV-GX or equivalent) may be needed. For surface mount
designs, solid tantalum capacitors can be used, but caution
must be exercised with regard to the capacitor surge current
rating. These capacitors must be capable of handling the
surge-current at power-up. The TPS series available from
AVX, and the 593D series from Sprague are both surge
current tested.
MOSFET Selection and Considerations
In high-current PWM applications, the MOSFET power
dissipation, package selection and heatsink are the
dominant design factors. The power dissipation includes two
loss components; conduction loss and switching loss. These
losses are distributed between the upper and lower
MOSFETs according to duty factor (see the following
equations). The conduction losses are the main component
of power dissipation for the lower MOSFETs, Q2 and Q4 of
Figure 1. Only the upper MOSFETs, Q1 and Q3 have
significant switching losses, since the lower device turns on
and off into near zero voltage.
The equations assume linear voltage-current transitions and
do not model power loss due to the reverse-recovery of the
lower MOSFETs body diode. The gate-charge losses are
dissipated by the Driver IC and don't heat the MOSFETs.
However, large gate-charge increases the switching time,
t
SW
which increases the upper MOSFET switching losses.
Ensure that both MOSFETs are within their maximum
junction temperature at high ambient temperature by
calculating the temperature rise according to package
thermal-resistance specifications. A separate heatsink may
be necessary depending upon MOSFET power, package
type, ambient temperature and air flow.
2
r
IN
2
r
IN
A diode, anode to ground, may be placed across Q2 and Q4
of Figure 1. These diodes function as a clamp that catches
the negative inductor swing during the dead time between
the turn off of the lower MOSFETs and the turn on of the
upper MOSFETs. The diodes must be a Schottky type to
prevent the lossy parasitic MOSFET body diode from
conducting. It is usually acceptable to omit the diodes and let
the body diodes of the lower MOSFETs clamp the negative
inductor swing, but efficiency could drop one or two percent
as a result. The diode's rated reverse breakdown voltage
must be greater than the maximum input voltage.
1.0
0.8
0.6
0.4
0.2
0
0
0.1
0.2
0.3
0.4
0.5
DUTY CYCLE (V
O
/V
IN
)
R
P
)
V
O
/
X
S
)
SINGLE
CHANNEL
2 CHANNEL
3 CHANNEL
4 CHANNEL
FIGURE 12. RIPPLE CURRENT vs DUTY CYCLE
0.5
0.4
0.3
0.2
0.1
0
0
0.1
0.2
0.3
0.4
0.5
DUTY CYCLE (V
O
/V
IN
)
C
SINGLE
CHANNEL
3 CHANNEL
4 CHANNEL
2 CHANNEL
FIGURE 13. CURRENT MULTIPLIER vs DUTY CYCLE
P
UPPER
I
------------------------------------------------------------
×
V
×
I
---------------------------------------------------------
V
×
t
×
F
×
+
=
P
LOWER
I
--------------------------------------------------------------------------------
×
V
V
–
(
)
×
=
HIP6301
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HIP6301EVAL2 | 功能描述:電源管理IC開(kāi)發(fā)工具 HIP6301 EVAL BRD RoHS:否 制造商:Maxim Integrated 產(chǎn)品:Evaluation Kits 類(lèi)型:Battery Management 工具用于評(píng)估:MAX17710GB 輸入電壓: 輸出電壓:1.8 V |
| HIP6301V | 制造商:INTERSIL 制造商全稱(chēng):Intersil Corporation 功能描述:Microprocessor CORE Voltage Regulator Multi-Phase Buck PWM Controller |
| HIP6301VCB | 功能描述:IC REG CTRLR BUCK PWM 20-SOIC RoHS:否 類(lèi)別:集成電路 (IC) >> PMIC - 穩(wěn)壓器 - DC DC 切換控制器 系列:- 標(biāo)準(zhǔn)包裝:4,000 系列:- PWM 型:電壓模式 輸出數(shù):1 頻率 - 最大:1.5MHz 占空比:66.7% 電源電壓:4.75 V ~ 5.25 V 降壓:是 升壓:無(wú) 回掃:無(wú) 反相:無(wú) 倍增器:無(wú) 除法器:無(wú) Cuk:無(wú) 隔離:無(wú) 工作溫度:-40°C ~ 85°C 封裝/外殼:40-VFQFN 裸露焊盤(pán) 包裝:帶卷 (TR) |
| HIP6301VCB-T | 功能描述:IC REG CTRLR BUCK PWM 20-SOIC RoHS:否 類(lèi)別:集成電路 (IC) >> PMIC - 穩(wěn)壓器 - DC DC 切換控制器 系列:- 標(biāo)準(zhǔn)包裝:4,000 系列:- PWM 型:電壓模式 輸出數(shù):1 頻率 - 最大:1.5MHz 占空比:66.7% 電源電壓:4.75 V ~ 5.25 V 降壓:是 升壓:無(wú) 回掃:無(wú) 反相:無(wú) 倍增器:無(wú) 除法器:無(wú) Cuk:無(wú) 隔離:無(wú) 工作溫度:-40°C ~ 85°C 封裝/外殼:40-VFQFN 裸露焊盤(pán) 包裝:帶卷 (TR) |
| HIP6301VCB-TS2490 | 制造商:Intersil Corporation 功能描述: |
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