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參數(shù)資料
| 型號： | HIP6019BCBZ |
| 廠商： | INTERSIL CORP |
| 元件分類： | 穩(wěn)壓器 |
| 英文描述： | Advanced Dual PWM and Dual Linear Power Control |
| 中文描述： | DUAL SWITCHING CONTROLLER, 215 kHz SWITCHING FREQ-MAX, PDSO28 |
| 封裝： | PLASTIC, MS-013AE, SOIC-28 |
| 文件頁數(shù)： | 14/15頁 |
| 文件大?。?/td> | 423K |
| 代理商： | HIP6019BCBZ |
14
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Intersil Corporation’s quality certifications can be viewed at www.intersil.com/design/quality
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see www.intersil.com
FN4587.1
April 13, 2005
diode must be a Schottky type to prevent the lossy parasitic
MOSFET body diode from conducting. It is acceptable to
omit the diode and let the body diode of the lower MOSFET
clamp the negative inductor swing, but efficiency might drop
one or two percent as a result. The diode's rated reverse
breakdown voltage must be greater than twice the maximum
input voltage.
PWM2 MOSFET and Schottky Selection
The power dissipation in PWM2 converter power devices is
similar to PWM1 except that the power losses of the lower
device are representative of a Schottky diode instead of a
MOSFET. The transistor power losses follow the PWM1
upper MOSFET equation, so the selection process should
be somewhat similar. The equation below describes the
conduction power losses incurred by the Schottky diode.
×
V
–
IN
As it can be observed, conduction losses in the Schottky
diode are proportional with the forward voltage drop (V
f
).
Linear Controller MOSFET Selection
The main criteria for selection of MOSFET for the linear
regulator is package selection for efficient removal of heat.
The power dissipated in a linear regulator is:
P
LINEAR
–
=
Select a package and heatsink that maintains the junction
temperature below the maximum rating while operating at
the highest expected ambient temperature.
HIP6019B DC-DC Converter Application
Circuit
Figure 15 shows an application circuit of a power supply for
a microprocessor computer system. The power supply
provides the microprocessor core voltage (V
OUT1
), the I/O
voltage (V
OUT2
), the GTL bus voltage (V
OUT3
) and clock
generator voltage (V
OUT4
) from +5V
DC
and +12V
DC
. For
detailed information on the circuit, including a Bill-of-
Materials and circuit board description, see Application Note
AN9800. Also see Intersil’s web page
(http://www.intersil.com).
P
SCH
I
------------------------------------------------------------
V
V
(
)
×
=
I
O
V
IN
V
OUT
(
)
×
HIP6019B
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HIP6019BCBZ-T | 功能描述:電壓模式 PWM 控制器 ADV DL 3PWM & DL LINER PWR CONTROL RoHS:否 制造商:Texas Instruments 輸出端數(shù)量:1 拓撲結(jié)構(gòu):Buck 輸出電壓:34 V 輸出電流: 開關(guān)頻率: 工作電源電壓:4.5 V to 5.5 V 電源電流:600 uA 最大工作溫度:+ 125 C 最小工作溫度:- 40 C 封裝 / 箱體:WSON-8 封裝:Reel |
| HIP6019BEVAL1 | 功能描述:電源管理IC開發(fā)工具 HIP6019B EVAL BRD FOR MB PWR MGMT RoHS:否 制造商:Maxim Integrated 產(chǎn)品:Evaluation Kits 類型:Battery Management 工具用于評估:MAX17710GB 輸入電壓: 輸出電壓:1.8 V |
| HIP6019CB | 制造商:Harris Corporation 功能描述: |
| HIP6019CB-T | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| HIP6019EVAL1 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Advanced Dual PWM and Dual Linear Power Control |
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