參數(shù)資料
型號： HIP2106IP
廠商： INTERSIL CORP
元件分類： 功率晶體管
英文描述： 100V/1A Peak, Low Cost, High Frequency Half Bridge Driver
中文描述： 1 A HALF BRDG BASED MOSFET DRIVER, PDIP8
封裝： PLASTIC, MS-001BA, DIP-8
文件頁數(shù)： 3/8頁
文件大?。?/td> 66K
代理商： HIP2106IP
3
Absolute Maximum Ratings
Thermal Information
Supply Voltage, V
DD,
V
HB
-V
HS
. . . . . . . . . . . . . . . . . . .-0.3V to 18V
LI and HI Voltages . . . . . . . . . . . . . . . . . . . . . . . . .-3V to V
DD
+0.3V
Voltage on LO . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to V
DD
+0.3V
Voltage on HO . . . . . . . . . . . . . . . . . . . . . . V
HS
-0.3V to V
HB
+0.3V
Voltage on HS (Continuous) . . . . . . . . . . . . . . . . . . . . . -1V to 110V
Voltage on HB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +118V
Average Current in V
DD
to HB Diode. . . . . . . . . . . . . . . . . . . 100mA
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1 (1kV)
Thermal Resistance (Typical, Note 1)
SOIC Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
PDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
HS Slew Rate. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10V/ns
Maximum Power Dissipation at 25
o
C in Free Air. . . . . . . . . .780mW
Maximum Storage Temperature Range. . . . . . . . . . -65
o
C to 150
o
C
Maximum Junction Temperature Range . . . . . . . . . -55
o
C to 150
o
C
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . .300
o
C
(Lead Tips Only)
θ
JA
(
o
C/W)
160
100
Recommended Operating Conditions
Supply Voltage, V
DD
. . . . . . . . . . . . . . . . . . . . . . . . . +9V to +16.5V
Voltage on HS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -1V to 100V
Voltage on HS . . . . . . . . . . . . . . . (Repetitive Transient) -5V to 105V
Voltage on HB. . . V
HS
+8V to V
HS
+16.5V and V
DD
-1V to V
DD
+100V
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1.
θ
JA
is measured with the component mounted on an evaluation PC board in free air.
2. All Voltages Relative to Pin 4, V
SS
Unless Otherwise Specified.
Electrical Specifications
V
DD
= V
HB
= 12V, V
SS
= V
HS
= 0V, No Load on LO or HO, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
T
J
= 25
o
C
TYP
T
J
= -40
o
C
TO 125
o
C
MIN
UNITS
MIN
MAX
MAX
SUPPLY CURRENTS
V
DD
Quiescent Current
V
DD
Operating Current
Total HB Quiescent Current
Total HB Operating Current
HB to V
SS
Current, Quiescent
HB to V
SS
Current, Operating
INPUT PINS
Low Level Input Voltage Threshold
High Level Input Voltage Threshold
Input Voltage Hysteresis
Input Pulldown Resistance
UNDER VOLTAGE PROTECTION
V
DD
Rising Threshold
V
DD
Threshold Hysteresis
HB Rising Threshold
HB Threshold Hysteresis
BOOT STRAP DIODE
Low-Current Forward Voltage
High-Current Forward Voltage
Dynamic Resistance
LO GATE DRIVER
Low Level Output Voltage
High Level Output Voltage
Peak Pullup Current
Peak Pulldown Current
HO GATE DRIVER
Low Level Output Voltage
High Level Output Voltage
Peak Pullup Current
I
DD
I
DDO
I
HB
I
HBO
I
HBS
I
HBSO
LI = HI = 0V
f = 500kHz
LI = HI = 0V
f = 500kHz
V
HS
= V
HB
= 116.5V
f = 500kHz
-
-
-
-
-
-
0.1
1.5
0.1
1.5
0.05
0.7
0.15
2.5
0.15
2.5
1
-
-
-
-
-
-
-
0.2
3
0.2
3
10
-
mA
mA
mA
mA
μ
A
mA
V
IL
V
IH
V
IHYS
R
I
4
-
-
-
5.4
5.8
0.4
200
-
8
-
-
3
-
-
-
9
-
V
V
V
k
100
500
V
DDR
V
DDH
V
HBR
V
HBH
7
-
7.3
0.5
6.9
0.4
8
-
6.5
-
6
-
8.5
-
8
-
V
V
V
V
6.5
-
7.5
-
V
DL
V
DH
R
D
I
VDD-HB
= 100
μ
A
I
VDD-HB
= 100mA
I
VDD-HB
= 100mA
-
-
-
0.45
0.7
0.8
0.55
0.8
1
-
-
-
0.7
1
1.5
V
V
V
OLL
V
OHL
I
OHL
I
OLL
I
LO
= 100mA
I
LO
= -100mA, V
OHL
= V
DD
-V
LO
V
LO
= 0V
V
LO
= 12V
-
-
-
-
0.25
0.25
1
1
0.3
0.3
-
-
-
-
-
-
0.4
0.4
-
-
V
V
A
A
V
OLH
V
OHH
I
OHH
I
HO
= 100mA
I
HO
= -100mA, V
OHH
= V
HB
-V
HO
V
HO
= 0V
-
-
-
0.25
0.25
1
0.3
0.3
-
-
-
-
0.4
0.4
-
V
V
A
HIP2106
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參數(shù)描述
HIP2120 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:100V, 2A Peak, High Frequency Half-Bridge Drivers with Adjustable Dead Time Control and PWM Input
HIP2120FRTAZ 功能描述:功率驅(qū)動器IC 100V 2A PEAK HALF BRDG DRV W/DELAY TMR RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube
HIP2120FRTAZ-T 功能描述:功率驅(qū)動器IC 100V 2A PEAK HALF BRDG DRV W/DELAY TMR RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube
HIP2120FRTBZ 功能描述:功率驅(qū)動器IC 100V 2A PEAK HALF BRDG DRV W/DELAY TMR RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube
HIP2120FRTBZ-T 功能描述:功率驅(qū)動器IC 100V 2A PEAK HALF BRDG DRV W/DELAY TMR RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube
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