參數(shù)資料
型號(hào)： HIP2106
廠商： Intersil Corporation
英文描述： 100V/1A Peak, Low Cost, High Frequency Half Bridge Driver CONTROL(100V/1A 峰值,低成本,高頻半橋驅(qū)動(dòng)控制)
中文描述： 100V/1A山頂，低成本，高頻率的一半橋驅(qū)動(dòng)器控制（100V/1A峰值，低成本，高頻半橋驅(qū)動(dòng)控制）
文件頁(yè)數(shù)： 4/8頁(yè)
文件大?。?/td> 66K
代理商： HIP2106
4
Peak Pulldown Current
I
OLH
V
HO
= 12V
-
1
-
-
-
A
Switching Specifications
V
DD
= V
HB
= 12V, V
SS
= V
HS
= 0V, No Load on LO or HO, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST
CONDITIONS
T
J
= 25
o
C
TYP
T
J
= - 40
o
C
TO 125
o
C
UNITS
MIN
MAX
MIN
MAX
Lower Turn-Off Propagation Delay (LI Falling to LO Falling)
t
LPHL
t
HPHL
t
LPLH
t
HPLH
t
MON
t
MOFF
t
RC
, t
FC
t
R
, t
F
t
RD
t
FD
t
PW
t
BS
-
40
70
-
90
ns
Upper Turn-Off Propagation Delay (HI Falling to HO Falling)
-
40
70
-
90
ns
Lower Turn-On Propagation Delay (LI Rising to LO Rising)
-
40
70
-
90
ns
Upper Turn-On Propagation Delay (HI Rising to HO Rising)
-
40
70
-
90
ns
Delay Matching: Lower Turn-On and Upper Turn-Off
-
4
16
-
20
ns
Delay Matching: Lower Turn-Off and Upper Turn-On
-
4
16
-
20
ns
Either Output Rise/Fall Time
C
L
= 1000pF
C
L
= 0.1
μ
F
C
L
= IRFR120
C
L
= IRFR120
-
20
-
-
-
ns
Either Output Rise/Fall Time (3V to 9V)
-
1.0
1.2
-
1.6
us
Either Output Rise Time Driving DMOS
-
40
-
-
-
ns
Either Output Fall Time Driving DMOS
-
20
-
-
-
ns
Minimum Input Pulse Width that Changes the Output
-
-
-
-
100
ns
Bootstrap Diode Turn-On or Turn-Off Time
-
20
-
-
-
ns
Pin Descriptions
PIN
NUMBER
SYMBOL
DESCRIPTION
1
V
DD
HB
Positive Supply to lower gate drivers. De-couple this pin to V
SS
(Pin 7). Bootstrap diode connected to HB (pin 2).
High-Side Bootstrap supply. External bootstrap capacitor is required. Connect positive side of bootstrap capacitor to
this pin. Bootstrap diode is on-chip.
2
3
HO
High-Side Output. Connect to gate of High-Side power MOSFET.
4
HS
High-Side Source connection. Connect to source of High-Side power MOSFET. Connect negative side of bootstrap
capacitor to this pin.
5
HI
High-Side input.
6
LI
Low-Side input.
7
V
SS
LO
Chip negative supply, generally will be ground.
8
Low-Side Output. Connect to gate of Low-Side power MOSFET.
Timing Diagrams
FIGURE 3.
FIGURE 4.
Electrical Specifications
V
DD
= V
HB
= 12V, V
SS
= V
HS
= 0V, No Load on LO or HO, Unless Otherwise Specified
(Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
T
J
= 25
o
C
TYP
T
J
= -40
o
C
TO 125
o
C
MIN
UNITS
MIN
MAX
MAX
t
HPLH
,
t
LPLH
t
HPHL
,
t
LPHL
HI,
LI
HO,
LO
t
MON
t
MOFF
LI
HI
LO
HO
HIP2106
相關(guān)PDF資料
PDF描述
HIP2106IP 100V/1A Peak, Low Cost, High Frequency Half Bridge Driver
HIP2106IB Circular Connector; MIL SPEC:MIL-C-26482, Series I, Crimp; Body Material:Aluminum; Series:PT06; Number of Contacts:16; Connector Shell Size:20; Connecting Termination:Crimp; Circular Shell Style:Straight Plug; Body Style:Straight
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HIP2106IB 制造商:Rochester Electronics LLC 功能描述:- Bulk
HIP2106IP 制造商:Rochester Electronics LLC 功能描述:- Bulk
HIP2120 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:100V, 2A Peak, High Frequency Half-Bridge Drivers with Adjustable Dead Time Control and PWM Input
HIP2120FRTAZ 功能描述:功率驅(qū)動(dòng)器IC 100V 2A PEAK HALF BRDG DRV W/DELAY TMR RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube
HIP2120FRTAZ-T 功能描述:功率驅(qū)動(dòng)器IC 100V 2A PEAK HALF BRDG DRV W/DELAY TMR RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube
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