參數(shù)資料
型號: HIP2101IB
廠商: INTERSIL CORP
元件分類: 功率晶體管
英文描述: 100V/2A Peak, Low Cost, High Frequency Half Bridge Driver
中文描述: 2 A HALF BRDG BASED MOSFET DRIVER, PDSO8
封裝: PLASTIC, MS-012AA, SOIC-8
文件頁數(shù): 10/12頁
文件大小: 413K
代理商: HIP2101IB
10
FN9025.8
HIP2101
Quad Flat No-Lead Plastic Package (QFN)
Micro Lead Frame Plastic Package (MLFP)
L16.5x5
16 LEAD QUAD FLAT NO-LEAD PLASTIC PACKAGE
(COMPLIANT TO JEDEC MO-220VHHB ISSUE C)
SYMBOL
MILLIMETERS
NOTES
MIN
NOMINAL
MAX
A
0.80
0.90
1.00
-
A1
-
-
0.05
-
A2
-
-
1.00
9
A3
0.20 REF
9
b
0.28
0.33
0.40
5, 8
D
5.00 BSC
-
D1
4.75 BSC
9
D2
2.55
2.70
2.85
7, 8
E
5.00 BSC
-
E1
4.75 BSC
9
E2
2.55
2.70
2.85
7, 8
e
0.80 BSC
-
k
0.25
-
-
-
L
0.35
0.60
0.75
8
L1
-
-
0.15
10
N
16
2
Nd
4
3
Ne
4
4
3
P
-
-
0.60
9
θ
-
-
12
9
Rev. 2 10/02
NOTES:
1. Dimensioning and tolerancing conform to ASME Y14.5-1994.
2. N is the number of terminals.
3. Nd and Ne refer to the number of terminals on each D and E.
4. All dimensions are in millimeters. Angles are in degrees.
5. Dimension b applies to the metallized terminal and is measured
between 0.15mm and 0.30mm from the terminal tip.
6. The configuration of the pin #1 identifier is optional, but must be
located within the zone indicated. The pin #1 identifier may be
either a mold or mark feature.
7. Dimensions D2 and E2 are for the exposed pads which provide
improved electrical and thermal performance.
8. Nominal dimensions are provided to assist with PCB Land Pattern
Design efforts, see Intersil Technical Brief TB389.
9. Features and dimensions A2, A3, D1, E1, P &
θ
are present when
Anvil singulation method is used and not present for saw
singulation.
10. Depending on the method of lead termination at the edge of the
package, a maximum 0.15mm pull back (L1) maybe present. L
minus L1 to be equal to or greater than 0.3mm.
相關PDF資料
PDF描述
HIP2101IBZ 100V/2A Peak, Low Cost, High Frequency Half Bridge Driver
HIP2101IB-T PTSE 19C 19#20 PIN PLUG
HIP2101IBZ-T 100V/2A Peak, Low Cost, High Frequency Half Bridge Driver
HIP2101EIB-T 100V/2A Peak, Low Cost, High Frequency Half Bridge Driver
HIP2101EIBZ-T 100V/2A Peak, Low Cost, High Frequency Half Bridge Driver
相關代理商/技術參數(shù)
參數(shù)描述
HIP2101IBT 功能描述:IC DRIVER HALF-BRIDGE 8-SOIC RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET,電橋驅動器 - 外部開關 系列:- 標準包裝:50 系列:- 配置:低端 輸入類型:非反相 延遲時間:40ns 電流 - 峰:9A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大(自引導啟動):- 電源電壓:4.5 V ~ 35 V 工作溫度:-40°C ~ 125°C 安裝類型:表面貼裝 封裝/外殼:TO-263-6,D²Pak(5 引線+接片),TO-263BA 供應商設備封裝:TO-263 包裝:管件
HIP2101IB-T 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:100V/2A Peak, Low Cost, High Frequency Half Bridge Driver
HIP2101IBZ 功能描述:功率驅動器IC HIP2101IBZVERSION 100V HALF BRDG DRVR RoHS:否 制造商:Micrel 產品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube
HIP2101IBZ 制造商:Intersil Corporation 功能描述:MOSFET Driver IC
HIP2101IBZT 功能描述:功率驅動器IC VER 100V HALFBRDG DR VR RoHS:否 制造商:Micrel 產品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube