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參數(shù)資料
| 型號： | HIP2101EIBZ |
| 廠商： | INTERSIL CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 100V/2A Peak, Low Cost, High Frequency Half Bridge Driver |
| 中文描述： | 2 A HALF BRDG BASED MOSFET DRIVER, PDSO8 |
| 封裝： | LEAD FREE, PLASTIC, SOIC-8 |
| 文件頁數(shù)： | 9/12頁 |
| 文件大?。?/td> | 413K |
| 代理商： | HIP2101EIBZ |
9
FN9025.8
HIP2101
Dual Flat No-Lead Plastic Package (DFN)
Micro Lead Frame Plastic Package (MLFP)
TOP VIEW
INDEX
AREA
D1/2
D1
D/2
D
E1/2
E/2
E1
E
A
2X
0.15
B
C
A
N
BOTTOM VIEW
SEATING
PLANE
5
6
2
3
1
0.10
NX b
A1
C
2X
C
0.15
0.15
2X
B
0
A1
A
C
C
B
2X
A
C
0.15
A2
A3
//
SIDE VIEW
0.08
C
4X
9
L
5
NX b
4X P
N
e
B
0.10
C A
D2
E2
1
(Nd-1)Xe
REF.
3
2
M
7
8
8
7
6
AREA
INDEX
N-1
D2/2
NX k
5
E2/2
e
FOR EVEN TERMINAL/SIDE
L
TERMINAL TIP
C
C
L12.4x4A
12 LEAD DUAL FLAT NO-LEAD PLASTIC PACKAGE
SYMBOL
MILLIMETERS
NOTES
MIN
NOMINAL
MAX
A
-
0.85
0.90
-
A1
0.00
0.01
0.05
-
A2
-
0.65
0.70
-
A3
0.20 REF
-
b
0.18
0.23
0.30
5, 8
D
4.00 BSC
-
D1
3.75 BSC
-
D2
2.65
2.80
2.95
7, 8
E
4.00 BSC
-
E1
3.75 BSC
-
E2
1.43
1.58
1.73
7, 8
e
0.50 BSC
-
k
0.635
-
-
-
L
0.30
0.40
0.50
8
N
12
2
Nd
6
3
P
0.24
0.42
0.60
-
θ
-
-
12
-
Rev. 0 8/03
NOTES:
1. Dimensioning and tolerancing conform to ASME Y14.5M-1994.
2. N is the number of terminals.
3. Nd refer to the number of terminals on D.
4. All dimensions are in millimeters. Angles are in degrees.
5. Dimension b applies to the metallized terminal and is measured
between 0.15mm and 0.30mm from the terminal tip.
6. The configuration of the pin #1 identifier is optional, but must be
located within the zone indicated. The pin #1 identifier may be
either a mold or mark feature.
7. Dimensions D2 and E2 are for the exposed pads which provide
improved electrical and thermal performance.
8. Nominal dimensions are provided to assist with PCB Land Pattern
Design efforts, see Intersil Technical Brief TB389.
9. COMPLIANT TO JEDEC MO-229-VGGD-2 ISSUE C except for
the L dimension
.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HIP2101EIBZT | 功能描述:功率驅(qū)動器IC 100V H-BRDG DRVR 8LD EP RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| HIP2101EIBZ-T | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:100V/2A Peak, Low Cost, High Frequency Half Bridge Driver |
| HIP2101IB | 功能描述:功率驅(qū)動器IC 100V H-BRDG DRVR RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| HIP2101IBT | 功能描述:IC DRIVER HALF-BRIDGE 8-SOIC RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:50 系列:- 配置:低端 輸入類型:非反相 延遲時間:40ns 電流 - 峰:9A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動）:- 電源電壓:4.5 V ~ 35 V 工作溫度:-40°C ~ 125°C 安裝類型:表面貼裝 封裝/外殼:TO-263-6，D²Pak（5 引線+接片），TO-263BA 供應(yīng)商設(shè)備封裝:TO-263 包裝:管件 |
| HIP2101IB-T | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:100V/2A Peak, Low Cost, High Frequency Half Bridge Driver |
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