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參數資料
| 型號： | HIP2101EIB |
| 廠商： | INTERSIL CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 100V/2A Peak, Low Cost, High Frequency Half Bridge Driver |
| 中文描述： | 2 A HALF BRDG BASED MOSFET DRIVER, PDSO8 |
| 封裝： | PLASTIC, SOIC-8 |
| 文件頁數： | 11/12頁 |
| 文件大?。?/td> | 413K |
| 代理商： | HIP2101EIB |
11
FN9025.8
HIP2101
Small Outline Plastic Packages (SOIC)
INDEX
AREA
E
D
N
1
2
3
-B-
0.25(0.010)
C A
M
B S
e
-A-
L
B
M
-C-
A1
A
SEATING PLANE
0.10(0.004)
h x 45
o
C
H
μ
α
0.25(0.010)
B
M
M
NOTES:
1. Symbols are defined in the “MO Series Symbol List” in Section 2.2 of
Publication Number 95.
2. Dimensioning and tolerancing per ANSI Y14.5M
-
1982.
3. Dimension “D” does not include mold flash, protrusions or gate burrs.
Mold flash, protrusion and gate burrs shall not exceed 0.15mm (0.006
inch) per side.
4. Dimension “E” does not include interlead flash or protrusions. Inter-
lead flash and protrusions shall not exceed 0.25mm (0.010 inch) per
side.
5. The chamfer on the body is optional. If it is not present, a visual index
feature must be located within the crosshatched area.
6. “L” is the length of terminal for soldering to a substrate.
7. “N” is the number of terminal positions.
8. Terminal numbers are shown for reference only.
9. The lead width “B”, as measured 0.36mm (0.014 inch) or greater
above the seating plane, shall not exceed a maximum value of
0.61mm (0.024 inch).
10. Controlling dimension: MILLIMETER. Converted inch dimensions
are not necessarily exact.
M8.15
(JEDEC MS-012-AA ISSUE C)
8 LEAD NARROW BODY SMALL OUTLINE PLASTIC
PACKAGE
SYMBOL
INCHES
MILLIMETERS
NOTES
MIN
MAX
MIN
MAX
A
0.0532
0.0688
1.35
1.75
-
A1
0.0040
0.0098
0.10
0.25
-
B
0.013
0.020
0.33
0.51
9
C
0.0075
0.0098
0.19
0.25
-
D
0.1890
0.1968
4.80
5.00
3
E
0.1497
0.1574
3.80
4.00
4
e
0.050 BSC
1.27 BSC
-
H
0.2284
0.2440
5.80
6.20
-
h
0.0099
0.0196
0.25
0.50
5
L
0.016
0.050
0.40
1.27
6
N
α
8
8
7
0
o
8
o
0
o
8
o
-
Rev. 0 12/93
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| HIP2101EIBT | 功能描述:IC DRVR HALF BRDG 100V 8EP-SOIC RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅動器 - 外部開關 系列:- 標準包裝:50 系列:- 配置:低端 輸入類型:非反相 延遲時間:40ns 電流 - 峰:9A 配置數:1 輸出數:1 高端電壓 - 最大（自引導啟動）:- 電源電壓:4.5 V ~ 35 V 工作溫度:-40°C ~ 125°C 安裝類型:表面貼裝 封裝/外殼:TO-263-6，D²Pak（5 引線+接片），TO-263BA 供應商設備封裝:TO-263 包裝:管件 |
| HIP2101EIB-T | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:100V/2A Peak, Low Cost, High Frequency Half Bridge Driver |
| HIP2101EIBZ | 功能描述:功率驅動器IC 100V H-BRDG DRVR 8LD EP RoHS:否 制造商:Micrel 產品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| HIP2101EIBZT | 功能描述:功率驅動器IC 100V H-BRDG DRVR 8LD EP RoHS:否 制造商:Micrel 產品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| HIP2101EIBZ-T | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:100V/2A Peak, Low Cost, High Frequency Half Bridge Driver |
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