參數(shù)資料
型號： HIP2100
廠商： Intersil Corporation
英文描述： 100V/2A Peak, Low Cost, High Frequency Half Bridge Driver(低價格高頻率半橋驅(qū)動器)
中文描述： 100V/2A山頂，低成本，高頻半橋驅(qū)動器（低價格高頻率半橋驅(qū)動器）
文件頁數(shù)： 4/12頁
文件大?。?/td> 349K
代理商： HIP2100
4
FN4022.13
Absolute Maximum Ratings
Thermal Information
Supply Voltage, V
DD,
V
HB
-V
HS
(Notes 3, 4) . . . . . . . . -0.3V to 18V
LI and HI Voltages (Note 4) . . . . . . . . . . . . . . . . -0.3V to V
DD
+0.3V
Voltage on LO (Note 4) . . . . . . . . . . . . . . . . . . . -0.3V to V
DD
+0.3V
Voltage on HO (Note 4) . . . . . . . . . . . . . . . V
HS
-0.3V to V
HB
+0.3V
Voltage on HS (Continuous) (Note 4) . . . . . . . . . . . . . . -1V to 110V
Voltage on HB (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +118V
Average Current in V
DD
to HB diode. . . . . . . . . . . . . . . . . . . 100mA
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1 (1kV)
Maximum Recommended Operating Conditions
Supply Voltage, V
DD
. . . . . . . . . . . . . . . . . . . . . . . .+9V to 14.0VDC
Voltage on HS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -1V to 100V
Voltage on HS. . . . . . . . . . . . . . . .(Repetitive Transient) -5V to 105V
Voltage on HB . . . V
HS
+8V to V
HS
+14.0V and V
DD
-1V to V
DD
+100V
HS Slew Rate. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . <50V/ns
Thermal Resistance (Typical)
SOIC (Note 5) . . . . . . . . . . . . . . . . . . .
EPSOIC (Note 6) . . . . . . . . . . . . . . . . .
QFN (Note 6) . . . . . . . . . . . . . . . . . . . .
DFN (Note 6) . . . . . . . . . . . . . . . . . . . .
Max Power Dissipation at 25°C in Free Air (SOIC, Note 5). . . . . . 1.3W
Max Power Dissipation at 25°C in Free Air (EPSOIC, Note 6) . . . 3.1W
Max Power Dissipation at 25°C in Free Air (QFN, Note 6) . . . . . . 3.3W
Storage Temperature Range . . . . . . . . . . . . . . . . . . .-65°C to 150°C
Junction Temperature Range. . . . . . . . . . . . . . . . . . .-55°C to 150°C
Lead Temperature (Soldering 10s - SOIC Lead Tips Only). . 300°C
For Recommended soldering conditions see Tech Brief TB389.
θ
JA
(°C/W)
95
40
37
40
θ
JC
(°C/W)
N/A
3.0
6.5
3.0
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the recommended operating conditions of this specification is not implied.
NOTES:
3. The HIP2100 is capable of derated operation at supply voltages exceeding 14V. Figure 16 shows the high-side voltage derating curve for this
mode of operation.
4. All voltages referenced to V
SS
unless otherwise specified.
5.
θ
JA
is measured with the component mounted on a high effective thermal conductivity test board in free air. See Tech Brief TB379 for details.
6.
θ
JA
is measured in free air with the component mounted on a high effective thermal conductivity test board with “direct attach” features.
θ
JC,
the
“case temp” is measured at the center of the exposed metal pad on the package underside. See Tech Brief TB379.
Electrical Specifications
V
DD
= V
HB
= 12V, V
SS
= V
HS
= 0V, No Load on LO or HO, Unless Otherwise Specified
PARAMETERS
SYMBOL
TEST CONDITIONS
T
J
= 25°C
T
J
= -40°C TO
125°C
UNITS
MIN
TYP
MAX
MIN
MAX
SUPPLY CURRENTS
V
DD
Quiescent Current
I
DD
LI = HI = 0V
-
0.1
0.15
-
0.2
mA
V
DD
Operating Current
I
DDO
f = 500kHz
-
1.5
2.5
-
3
mA
Total HB Quiescent Current
I
HB
LI = HI = 0V
-
0.1
0.15
-
0.2
mA
Total HB Operating Current
I
HBO
f = 500kHz
-
1.5
2.5
-
3
mA
HB to V
SS
Current, Quiescent
I
HBS
V
HS
= V
HB
= 114V
-
0.05
1
-
10
μ
A
HB to V
SS
Current, Operating
I
HBSO
f = 500kHz
-
0.7
-
-
-
mA
INPUT PINS
Low Level Input Voltage Threshold
V
IL
4
5.4
-
3
-
V
High Level Input Voltage Threshold
V
IH
-
5.8
7
-
8
V
Input Voltage Hysteresis
V
IHYS
-
0.4
-
-
-
V
Input Pulldown Resistance
R
I
-
200
-
100
500
k
UNDERVOLTAGE PROTECTION
V
DD
Rising Threshold
V
DDR
7
7.3
7.8
6.5
8
V
V
DD
Threshold Hysteresis
V
DDH
-
0.5
-
-
-
V
HB Rising Threshold
V
HBR
6.5
6.9
7.5
6
8
V
HB Threshold Hysteresis
V
HBH
-
0.4
-
-
-
V
HIP2100
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HIP2100_04 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:100V/2A Peak, Low Cost, High Frequency Half Bridge Driver
HIP2100EIB 功能描述:IC DRIVER HALF BRIDGE 8-SOIC RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:50 系列:- 配置:低端 輸入類型:非反相 延遲時間:40ns 電流 - 峰:9A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動）:- 電源電壓:4.5 V ~ 35 V 工作溫度:-40°C ~ 125°C 安裝類型:表面貼裝 封裝/外殼:TO-263-6，D²Pak（5 引線+接片），TO-263BA 供應(yīng)商設(shè)備封裝:TO-263 包裝:管件
HIP2100EIBT 功能描述:IC DRIVER HALF BRIDGE 100V 8SOIC RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:50 系列:- 配置:低端 輸入類型:非反相 延遲時間:40ns 電流 - 峰:9A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動）:- 電源電壓:4.5 V ~ 35 V 工作溫度:-40°C ~ 125°C 安裝類型:表面貼裝 封裝/外殼:TO-263-6，D²Pak（5 引線+接片），TO-263BA 供應(yīng)商設(shè)備封裝:TO-263 包裝:管件
HIP2100EIBZ 功能描述:功率驅(qū)動器IC 100V H-BRDG DRVR 8LD EP RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube
HIP2100EIBZT 功能描述:功率驅(qū)動器IC 100V H-BRDG DRVR 8LD EP RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube
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