參數(shù)資料
型號(hào): HIP2060AS2
廠商: INTERSIL CORP
元件分類: 功率晶體管
英文描述: 20000 SYSTEM GATE 3.3 VOLT LOGIC CELL AR - NOT RECOMMENDED for NEW DESIGN
中文描述: 10 A, 60 V, 0.15 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MO-169AB
封裝: SURFACE MOUNT, SIP-5
文件頁數(shù): 4/8頁
文件大?。?/td> 59K
代理商: HIP2060AS2
4
Typical Performance Curves
FIGURE 1. SAFE-OPERATING AREA CURVE
FIGURE 2. UNCLAMPED INDUCTIVE-SWITCHING
FIGURE 3. SATURATION CHARACTERISTICS
FIGURE 4. TRANSFER CHARACTERISTICS
FIGURE 5. NORMALIZED r
DS(ON)
vs JUNCTION TEMPERATURE
FIGURE 6. NORMALIZED BV
DSS
vs JUNCTION TEMPERATURE
1
5
10
50
100
5
10
50
0.5
V
DS
, DRAIN-TO-SOURCE VOLTAGE (V)
I
D
,
1
DC
10ms
1ms
100
μ
s
10
μ
s
LIMITED BY r
DS(ON)
AREA MAY BE
OPERATION IN THIS
T
C
= 25
o
C
1
0.01
1
0.1
5
10
50
t
AV
, TIME IN AVALANCHE (ms)
I
A
,
0.001
STARTING T
C
= 25
o
C
STARTING T
C
= 125
o
C
0
2
4
6
8
10
0
5
10
15
20
I
D
,
V
DS
, DRAIN-TO-SOURCE VOLTAGE (V)
V
GS
= 15V
V
GS
= 12V
V
GS
= 10V
V
GS
= 8V
PULSE DURATION = 300
μ
s, T
C
= 25
o
C
0
2
4
6
8
10
0
5
10
15
20
I
D
,
V
GS
, GATE-TO-SOURCE VOLTAGE (V)
150
o
C
25
o
C
-40
o
C
V
DS
= 15V
0
-75
0.5
1.0
1.5
2.0
2.5
N
D
T
J
, JUNCTION TEMPERATURE (
o
C)
-25
25
75
125
175
PULSE DURATION = 300
μ
s, V
GS
= 10V, I
D
= 10A
N
D
T
J
, JUNCTION TEMPERATURE (
o
C)
-75
-25
25
75
125
175
0.8
0.9
1.0
1.1
1.2
I
D
= 100
μ
A
HIP2060
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