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參數(shù)資料
| 型號： | HIP0063 |
| 廠商： | Intersil Corporation |
| 元件分類： | 數(shù)字電位計 |
| 英文描述： | Potentiometer; Series:CLU; Track Resistance:2.5kohm; Power Rating:2W; Operating Temperature Range:-55 C to +120 C; Adjustment Type:Knob; Leaded Process Compatible:Yes; Mechanical Angle/Rotation:312 RoHS Compliant: Yes |
| 中文描述： | 六角低邊MOSFET驅(qū)動器，串行或并行接口與控制的故障診斷 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 61K |
| 代理商： | HIP0063 |
3
Specifications HIP0063
Absolute Maximum Ratings
Thermal Information
(Typical)
Logic Supply Voltage, V
CC
. . . . . . . . . . . . . . . . . . . . . . . -0.3V to 7V
Max Quiescent Logic Supply Current, I
CC
. . . . . . . . . . . . . . . . .5mA
Logic Input Voltage . . . . . . . . . . . . . . . . . . . . . .-0.3V to V
CC
+ 0.3V
System Supply Voltage Monitor, V
PWR
(Note 1)
Max Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . -1.5V to 38V
Max Drain Clamp Voltage, V
DM
(Note 2) . . . . . . . . . . . . . . . . . . 75V
Max Gate Drive Output Voltage, V
G
(Note 3) . . . .-0.3 to V
CC
+ 0.3V
Operating Ambient Temperature Range, T
A
. . . . -40
o
C to +125
o
C
Operating Junction Temperature Range . . . . . . -40
o
C to +150
o
C
Storage Temperature Range, T
STG
. . . . . . . . . . -55
o
C to +150
o
C
Lead Temperature (Soldering 10s Max). . . . . . . . . . . . . . . +265
o
C
Thermal Resistance
28 Lead SOIC Package . . . . . . . . . . . . . . . . . . . . . . .
θ
JA
75
o
C/W
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Electrical Specifications
V
CC
= 4.5V to 5.5V, V
PWR
= 5.5V to 17V, T
A
= -40
o
C to +125
o
C, Unless Otherwise Specified
PARAMETERS
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
POWER SUPPLY
Logic Supply Quiescent Current
I
CC
-
-
5
mA
V
CC
Threshold for POR Reset
V
POR
PI0-5 High (ON), Increase V
CC
, Measure
V
CC
Threshold When Gate Drive Goes
High
3.5
4
4.25
V
POR Hysteresis
V
POR_HYS
PI0-5 High, Decrease V
CC
, Measure V
CC
Threshold when Gate Drive goes Low,
Hysteresis Equals Differential V
CC
Voltage
for Gate Drive High to Gate Drive Low
-
500
-
mV
Undervoltage Lockout, Low V
CC
V
CC
V
PWR
= 14V
1
2
3.7
V
Battery Supply Monitor Current
I
PWR
V
PWR
= 14V
-
-
150
μ
A
V
PWR
Over-Voltage Shutdown
Threshold
V
PWR_OVTH
V
PWR
Threshold Measured When Gate
Drive Voltage, V
G
Goes Low
30
35
40
V
V
PWR
Over-Voltage Shutdown
Hysteresis
V
PWR_OVHYS
-
1
-
V
LOGIC INPUTS
Input High Voltage; SI, SCK, CS
V
IH
0.7V
CC
-
-
V
Input Low Voltage; SI, SCK, CS
V
IL
-
-
0.3V
CC
V
Input Leakage Current; SI, SCK
I
LK
-10
0
10
μ
A
Input Pulldown Currents;
PI0-5, HPW01, HPW45
I
IN_PD
0.3V
CC
< V
IN
< V
CC
3
10
25
μ
A
Input Pullup Currents; CS, HLOS
I
IN_PU
GND < V
IN
< 0.7 V
CC
-25
-10
-2
μ
A
Threshold Voltage at Falling Edge,
PI0-5, HLOS, HPW01, HPW45
V
T
-
1.5
2.2
3.0
V
Threshold Voltge at Rising Edge,
PI0-5, HLOS, HPW01, HPW45
V
T
+
1.8
2.6
3.4
V
Input Hysteresis Voltage;
PI0-5, HLOS, HPW01, HPW45
V
IN_HYS
250
500
650
mV
Input Capacitance, SCK, SI
C
IN
0 < V
IN
< V
CC
-
7
12
pF
DATA OUTPUT
SO Data Output High Voltage
V
OH
I
O
= 5mA Source Current
0.8V
CC
-
-
V
SO Data Output Low Voltage
V
OL
I
O
= 5mA Sink Current
-
0.2
0.4
V
SO Three-State Leakage Current
I
SOT
V
CC
= 0V to 5.5V
-10
1
10
μ
A
SO Three-State Capacitance
C
SOT
0 < V
IN
< V
CC
-
15
20
pF
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