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參數(shù)資料
| 型號： | HI667A |
| 英文描述： | PNP-120V-1A20W|Bipolar Transistors |
| 中文描述： | 進步黨- 120伏特，1A20W |雙極晶體管 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 22K |
| 代理商： | HI667A |
HI-SINCERITY
MICROELECTRONICS CORP.
HI667A
PNP EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HE9007-A
Issued Date : 1998.01.25
Revised Date : 2000.11.01
Page No. : 1/2
HSMC Product Specification
Description
The HI667A is designed for low frequency power amplifier.
Absolute Maximum Ratings
(Ta=25
°
C)
Maximum Temperatures
Storage Temperature............................................................................................ -55 ~ +150
°
C
Junction Temperature.................................................................................................... +150
°
C
Maximum Power Dissipation
Total Power Dissipation (Tc=25
°
C) .................................................................................... 20 W
Maximum Voltages and Currents
BVCBO Collector to Base Voltage................................................................................... -120 V
BVCEO Collector to Emitter Voltage................................................................................ -100 V
BVEBO Emitter to Base Voltage.......................................................................................... -5 V
IC Collector Current............................................................................................................. -1 A
Characteristics
(Ta=25
°
C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
*VCE(sat)
*VBE(on)
*hFE1
*hFE2
fT
Cob
Min.
-120
-100
-5
-
-
-
60
30
-
-
Typ.
-
-
-
-
-
-
-
-
140
12
Max.
-
-
-
-10
-1
-1.5
200
-
-
-
Unit
V
V
V
uA
V
V
Test Conditions
IC=-100uA
IC=-1mA
IC=-10uA
VCB=-100V
IC=-500mA, IB=-50mA
VCE=-5V, IC=-150mA
VCE=-5V, IC=-150mA
VCE=-5V, IC=-500mA
VCE=-5V, IC=-150mA
VCB=-10V, f=1MHz, IE=0
*Pulse Test : Pulse Width
≤
380us, Duty Cycle
≤
2%
MHz
pF
Classification Of hFE1
Rank
Range
B
C
60-120
100-200
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