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參數(shù)資料
| 型號(hào)： | HI45H11 |
| 廠商： | HSMC CORP. |
| 英文描述： | PNP EPITAXIAL PLANAR TRANSISTOR |
| 中文描述： | 進(jìn)步黨外延平面晶體管 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 22K |
| 代理商： | HI45H11 |
HI-SINCERITY
MICROELECTRONICS CORP.
HI45H11
PNP EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HE9006-B
Issued Date : 1994.11.09
Revised Date : 2000.11.01
Page No. : 1/2
HSMC Product Specification
Description
The HI45H11 is designed for various specific and general purpose
applications, such as: output and driver stages of amplifiers opera-
ting at frequencies from DC to greater than 1MHz;series, shunt and
switching regulators; low and high frequency inverters/converters;
and many others.
Absolute Maximum Ratings
(Ta=25
°
C)
Maximum Temperatures
Storage Temperature............................................................................................ -55 ~ +150
°
C
Junction Temperature.................................................................................................... +150
°
C
Maximum Power Dissipation
Total Power Dissipation (Tc=25
°
C) .................................................................................... 20 W
Maximum Voltages and Currents
BVCEO Collector to Base Voltage..................................................................................... -80 V
BVCES Collector to Emitter Voltage.................................................................................. -80 V
BVEBO Emitter to Base Voltage.......................................................................................... -5 V
IC Collector Current .......................................................................................................... -10 A
IB Base Current................................................................................................................... -5 A
Characteristics
(Ta=25
°
C)
Symbol
BVCEO
BVCES
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(sat)
*hFE1
*hFE2
Cob
fT
Min.
-80
-80
-5
-
-
-
-
60
40
-
-
Typ.
-
-
-
-
-
-
-
-
-
230
40
Max.
-
-
-
-10
-50
-1
-1.5
-
-
-
-
Unit
V
V
V
uA
uA
V
V
Test Conditions
IC=-100mA, IB=0
IC=-1mA, IB=0
IE=-1mA, IC=0
VCB=-80V, IE=0
VEB=-5V, IC=0
IC=-8A, IB=-0.8A
IC=-8A, IB=-0.8A
VCE=-1V, IC=-2A
VCE=-1V, IC=-4A
VCB=-10V
VCE=-10V, IC=-500mA, f=20MHz
*Pulse Test : Pulse Width
≤
380us, Duty Cycle
≤
2%
pF
MHz
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