參數(shù)資料
型號(hào): HI-548
廠商: Intersil Corporation
英文描述: Single 16 and 8, Differential 8-Channel and 4-Channel CMOS Analog MUXs with Active Overvoltage Protection
中文描述: 單16和8,差分8通道和4通道CMOS模擬MUXs與Active過壓保護(hù)
文件頁(yè)數(shù): 15/15頁(yè)
文件大小: 329K
代理商: HI-548
15
All Intersil semiconductor products are manufactured, assembled and tested under
ISO9000
quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site
http://www.intersil.com
Die Characteristics
DIE DIMENSIONS:
83 mils x 108 mils
METALLIZATION:
Type: CuAl
Thickness: 16k
±
2k
SUBSTRATE POTENTIAL (NOTE):
-V
SUPPLY
PASSIVATION:
Type: Nitride Over Silox
Nitride Thickness: 3.5k
±
1k
Silox Thickness: 12k
±
2k
WORST CASE CURRENT DENSITY:
1.4 x 10
5
A/cm
TRANSISTOR COUNT:
253
PROCESS:
CMOS-DI
NOTE: The substrate appears resistive to the -V
SUPPLY
terminal, therefore it may be left floating (Insulating Die Mount) or it may be mounted on a
conductor at -V
SUPPLY
potential.
Metallization Mask Layouts
HI-548
HI-549
IN 6
(11)
IN 7 IN 8
(10)
OUT
(8)
IN 4
(7)
IN 3
(6)
IN 1
(4)
IN 2
(5)
-V
(3)
A
0
(1)
A
1
(16)
A
2
(15)
EN
(2)
IN 5
(12)
GND
(14)
+V
(13)
(9)
IN 3B IN 4BOUT B
(11)
(10)
OUT A
(8)
IN 4A IN 3A
(7)
IN 1A
(4)
IN 2A
(5)
-V
(3)
A
0
(1)
A
1
(16)
GND
(15)
EN
(2)
IN 2B
(12)
+V
(14)
IN 1B
(13)
(9)
(6)
HI-546, HI-547, HI-548, HI-549
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