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參數(shù)資料
| 型號(hào)： | HGTP5N120BND |
| 廠商： | INTERSIL CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes(21A, 1200V,NPT系列N溝道絕緣柵雙極型晶體管) |
| 中文描述： | 21 A, 1200 V, N-CHANNEL IGBT |
| 封裝： | TO-220AB ALTERNATE VERSION, 3 PIN |
| 文件頁(yè)數(shù)： | 5/7頁(yè) |
| 文件大?。?/td> | 89K |
| 代理商： | HGTP5N120BND |
5
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 12. TURN-OFF FALL TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 13. TRANSFER CHARACTERISTIC
FIGURE 14. GATE CHARGE WAVEFORMS
Typical Performance Curves
Unless Otherwise Specified
(Continued)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
d
,
3
2
4
6
20
30
5
7
9
8
10
40
35
25
15
R
G
= 25
, L = 5mH, V
CE
= 960V
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 12V
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 15V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
r
,
0
10
15
40
20
4
2
30
3
7
6
5
25
10
9
8
35
R
G
= 25
, L = 5mH, V
CE
= 960V
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 15V
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 12V
10
100
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
d
,
250
225
200
175
150
2
3
4
5
6
7
8
9
R
G
= 25
, L = 5mH, V
CE
= 960V
V
GE
= 12V, V
GE
= 15V, T
J
= 150
o
C
V
GE
= 12V, V
GE
= 15V, T
J
= 25
o
C
125
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
f
,
150
50
250
100
200
2
3
4
5
6
7
8
9
10
R
G
= 25
, L = 5mH, V
CE
= 960V
T
J
= 25
o
C, V
GE
= 12V OR 15V
T
J
= 150
o
C, V
GE
= 12V OR 15V
I
C
,
0
10
20
30
13
7
8
9
10
12
V
GE
, GATE TO EMITTER VOLTAGE (V)
11
40
50
60
14
15
70
T
C
= 25
o
C
T
C
= -55
o
C
T
C
= 150
o
C
80
PULSE DURATION = 250
μ
s
DUTY CYCLE <0.5%, V
CE
= 20V
V
G
,
Q
G
, GATE CHARGE (nC)
14
4
16
2
6
0
60
50
40
8
10
12
30
20
10
0
V
CE
= 800V
V
CE
= 400V
V
CE
= 1200V
I
G(REF)
= 1mA, R
L
= 120
, T
C
= 25
o
C
HGTG5N120BND, HGTP5N120BND, HGT1S5N120BNDS
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| HGTP5N120 | 21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HGTP5N120CN | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| HGTP5N120CND | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:25A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
| HGTP5N120CNS | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 25A I(C) | TO-263AB |
| HGTP5N120CNS9A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 25A I(C) | TO-263AB |
| HGTP6N40E1D | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
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