參數(shù)資料
型號(hào): HGTP2N120CN
廠商: INTERSIL CORP
元件分類: 功率晶體管
英文描述: 13A, 1200V, NPT Series N-Channel IGBT
中文描述: 13 A, 1200 V, N-CHANNEL IGBT, TO-220AB
文件頁(yè)數(shù): 7/9頁(yè)
文件大?。?/td> 498K
代理商: HGTP2N120CN
7
www.fairchildsemi.com
HGTP2N120CN, HGT1S2N120CN Rev. C
H
Test Circuit and Waveforms
(Continued)
Figure 18. Inductive Switching Test Circuit
Figure 19. Switching Test Waveforms
R
G
= 51
L = 5mH
V
DD
= 960V
+
-
RHRD4120
t
fI
t
d(OFF)I
t
rI
t
d(ON)I
10%
90%
10%
90%
V
CE
I
CE
V
GE
E
OFF
E
ON2
相關(guān)PDF資料
PDF描述
HGT1S2N120CNDS 13A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes
HGT1S2N120CNS 13A, 1200V, NPT Series N-Channel IGBT
HGTP2N120CN 13A, 1200V, NPT Series N-Channel IGBT
HGTP2N120CNS 13A, 1200V, NPT Series N-Channel IGBT
HGT1S5N120BNS XC9536-7VQ44I - NOT RECOMMENDED for NEW DESIGN
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HGTP2N120CND 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:13A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes
HGTP2N120CNS 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:13A, 1200V, NPT Series N-Channel IGBT
HGTP3N60A4 功能描述:IGBT 晶體管 600V N-Channel IGBT NPT Series RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
HGTP3N60A4_NL 制造商:Fairchild Semiconductor Corporation 功能描述:
HGTP3N60A4D 功能描述:IGBT 晶體管 600V N-Channel IGBT SMPS Series RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube