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參數(shù)資料
| 型號： | HGTP2N120CN_NL |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 13A, 1200V, NPT Series N-Channel IGBT |
| 中文描述： | 13 A, 1200 V, N-CHANNEL IGBT, TO-220AB |
| 封裝： | TO-220AB, 3 PIN |
| 文件頁數(shù)： | 5/9頁 |
| 文件大?。?/td> | 498K |
| 代理商： | HGTP2N120CN_NL |
5
www.fairchildsemi.com
HGTP2N120CN, HGT1S2N120CN Rev. C
HG
TP2
N
1
20
CN,
HG
T1
S
2N1
2
0CN
1
3A,
12
0
0V
,NP
T
S
eries
N-Cha
nne
lIGBT
Typical Performance Characteristics (Continued)
Figure 7. Turn-On Energy Loss vs Collector to
Figure 8. Turn-Off Energy Loss vs Collector to
Emitter Current
Figure 9. Turn_On Delay Time vs Collector to
Figure 10. Turn-On Rise Time vs Collector to
Emitter Current
Figure 11. Turn-Off Delay Time vs Collector to
Figure 12. Fall Time vs Collector to Emitter
Emitter Current
Current
E
ON
2
,TUR
N
-O
N
ENER
GY
LO
SS
(
J)
1500
ICE, COLLECTOR TO EMITTER CURRENT (A)
1000
500
2.5
1.5
3.5
3.0
2.0
1.0
4.0
4.5
5.0
2000
0
TJ = 150oC, VGE = 12V, VGE = 15V
RG = 51, L = 5mH, VCE = 960V
TJ = 25
oC, V
GE = 12V, VGE = 15V
ICE, COLLECTOR TO EMITTER CURRENT (A)
E
OF
F,
TU
RN-
O
FF
ENER
GY
LO
SS
(
J)
3.0
2.0
1.5
2.5
3.5
1.0
300
200
400
500
4.5
4.0
600
700
800
900
5.0
RG = 51, L = 5mH, VCE = 960V
TJ = 150oC, VGE = 12V OR 15V
TJ = 25oC, VGE = 12V OR 15V
100
ICE, COLLECTOR TO EMITTER CURRENT (A)
t dI
,
T
URN-ON
D
E
LA
Y
TIME
(n
s)
1.5
1.0
2.0
3.0
20
30
2.5
3.5
4.5
4.0
5.0
40
35
25
15
RG = 51, L = 5mH, VCE = 960V
TJ = 25oC, TJ = 150oC, VGE = 12V
45
TJ = 25oC, TJ = 150oC, VGE = 15V
ICE, COLLECTOR TO EMITTER CURRENT (A)
t rI
,
R
ISE
TIME
(ns
)
0
10
15
40
20
2.0
1.0
30
1.5
3.5
3.0
2.5
25
5.0
4.5
4.0
35
RG = 51, L = 5mH, VCE = 960V
TJ = 25oC, TJ = 150oC, VGE = 12V
TJ = 25oC, TJ = 150oC, VGE = 15V
5
5.0
100
ICE, COLLECTOR TO EMITTER CURRENT (A)
t d(O
F
F)I
,TURN-OFF
DELA
Y
TIME
(n
s)
400
350
300
250
200
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
150
VGE = 12V, VGE = 15V, TJ = 150
oC
RG = 51, L = 5mH, VCE = 960V
VGE = 12V, VGE = 15V, TJ = 25oC
ICE, COLLECTOR TO EMITTER CURRENT (A)
t fI
,F
A
LL
TI
M
E
(ns) 500
300
700
400
600
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
TJ = 150oC, VGE = 12V OR 15V
RG = 51, L = 5mH, VCE = 960V
TJ = 25oC, VGE = 12V OR 15V
200
100
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相關(guān)代理商/技術(shù)參數(shù) |
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| HGTP2N120CNS | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:13A, 1200V, NPT Series N-Channel IGBT |
| HGTP3N60A4 | 功能描述:IGBT 晶體管 600V N-Channel IGBT NPT Series RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGTP3N60A4_NL | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| HGTP3N60A4D | 功能描述:IGBT 晶體管 600V N-Channel IGBT SMPS Series RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGTP3N60A4D9A | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
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