參數(shù)資料
型號(hào)： HGTP12N60C3D
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類(lèi)： 功率晶體管
英文描述： 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
中文描述： 24 A, 600 V, N-CHANNEL IGBT, TO-220AB
文件頁(yè)數(shù)： 4/8頁(yè)
文件大?。?/td> 154K
代理商： HGTP12N60C3D
2001 Fairchild Semiconductor Corporation
HGTP12N60C3D, HGT1S12N60C3DS Rev. B
FIGURE 5. MAXIMUM DC COLLECTOR CURRENT vs CASE
TEMPERATURE
FIGURE 6. SHORT CIRCUIT WITHSTAND TIME
FIGURE 7. TURN ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 8. TURN OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 9. TURN ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 10. TURN OFF FALL TIME vs COLLECTOR TO
EMITTER CURRENT
Typical Performance Curves
(Continued)
25
50
75
100
125
150
0
5
10
15
20
25
I
C
,
T
C
, CASE TEMPERATURE (
o
C)
V
GE
= 15V
I
S
,
20
60
80
120
t
S
,
μ
s
10
11
12
V
GE
, GATE TO EMITTER VOLTAGE (V)
14
15
13
140
100
40
I
SC
5
10
15
20
V
CE
= 360V, R
G
= 25
, T
J
= 125
o
C
t
SC
t
d
,
10
20
30
5
10
15
20
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
100
25
30
50
V
GE
= 10V
V
GE
= 15V
T
J
= 150
o
C, R
G
= 25
, L = 100
μ
H, V
CE(PK)
= 480V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
d
,
400
300
200
100
5
10
15
20
25
30
T
J
= 150
o
C, R
G
= 25
, L = 100
μ
H, V
CE(PK)
= 480V
V
GE
= 10V
V
GE
= 15V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
r
,
5
10
100
5
10
15
20
25
30
V
GE
= 15V
V
GE
= 10V
200
T
J
= 150
o
C, R
G
= 25
, L = 100
μ
H, V
CE(PK)
= 480V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
f
,
100
90
5
10
15
20
25
30
200
300
T
J
= 150
o
C, R
G
= 25
, L = 100
μ
H, V
CE(PK)
= 480V
V
GE
= 10V OR 15V
80
HGTP12N60C3D, HGT1S12N60C3DS
相關(guān)PDF資料
PDF描述
HGTP12N60C3D 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
HGT1S12N60C3DS 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
HGTP14N36G3VL DIODE ZENER SINGLE 500mW 30Vz 4.2mA-Izt 0.05 0.1uA-Ir 23Vr DO35-GLASS 5K/REEL
HGT1S14N36G3VL 14A, 360V N-Channel, Logic Level, Voltage Clamping IGBTs
HGT1S14N36G3VLS DIODE ZENER SINGLE 500mW 39Vz 3.2mA-Izt 0.05 0.1uA-Ir 32Vr DO35-GLASS 5K/AMMO
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HGTP12N60C3R 制造商:Rochester Electronics LLC 功能描述:- Bulk
HGTP12N60D1 制造商:Harris Corporation 功能描述:
HGTP14N0FVLR4600 制造商:Rochester Electronics LLC 功能描述:- Bulk
HGTP14N36G3VL 功能描述:IGBT 晶體管 14a 380V Logic Level RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
HGTP14N37G3VL 功能描述:IGBT 晶體管 14A 370V N-Ch RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*