參數(shù)資料
型號： HGTG5N120BND
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 功率晶體管
英文描述： 21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes
中文描述： 21 A, 1200 V, N-CHANNEL IGBT, TO-247
封裝： TO-247, 3 PIN
文件頁數(shù)： 6/8頁
文件大?。?/td> 216K
代理商： HGTG5N120BND
2003 Fairchild Semiconductor Corporation
HGTG5N120BND, HGTP5N120BND, Rev. B1
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
FIGURE 16. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 17. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
FIGURE 18. DIODE FORWARD CURRENT vs FORWARD
VOLTAGE DROP
FIGURE 19. RECOVERY TIMES vs FORWARD CURRENT
Typical Performance Curves
Unless Otherwise Specified
(Continued)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
0
5
10
15
20
25
0
0.5
C
IES
C
OES
1.0
C
RES
FREQUENCY = 1MHz
C
1.5
2.0
I
C
,
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
0
0.5
1.0
DUTY CYCLE < 0.5%, T
C
= 110
o
C
PULSE DURATION = 250
μ
s
V
GE
= 15V
V
GE
= 10V
1.5
2.0
2.5
3.0
3.5
4.0
4.5
0
2
4
6
8
10
t
1
, RECTANGULAR PULSE DURATION (s)
Z
θ
J
,
10
-2
10
-1
10
0
10
-5
10
-3
10
-2
10
-1
10
0
10
-4
DUTY FACTOR, D = t
1
/ t
2
PEAK T
J
= (P
D
x Z
θ
JC
x R
θ
JC
) + T
C
SINGLE PULSE
0.5
0.2
0.1
0.05
0.02
0.01
t
1
t
2
P
D
1
10
100
0
1
2
3
4
5
6
7
8
I
F
,
V
F
, FORWARD VOLTAGE (V)
150
o
C
-55
o
C
25
o
C
60
50
40
30
20
10
0
1
2
3
4
5
6
7
I
F
, FORWARD CURRENT (A)
t
T
C
= 25
o
C, dl
EC
/ dt = 200A/
μ
s
t
rr
t
a
t
b
HGTG5N120BND, HGTP5N120BND
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HGTG5N120CND 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:25A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
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