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參數(shù)資料
| 型號(hào)： | HGTG30N60B3 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 2.5V 36-mc CPLD - NOT RECOMMENDED for NEW DESIGN |
| 中文描述： | 60 A, 600 V, N-CHANNEL IGBT, TO-247 |
| 封裝： | TO-247, 3 PIN |
| 文件頁數(shù)： | 4/8頁 |
| 文件大?。?/td> | 178K |
| 代理商： | HGTG30N60B3 |
200
4
Fairchild Semiconductor Corporation
HGTG30N60A4 Rev. B
2
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
Typical Performance Curves
Unless Otherwise Specified
(Continued)
0
1.0
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
I
C
,
0
10
20
1.5
2.0
2.5
40
30
T
J
= 150
o
C
PULSE DURATION = 250
μ
s
DUTY CYCLE < 0.5%, V
GE
= 12V
50
T
J
= 25
o
C
0.5
T
J
= 125
o
C
I
C
,
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
DUTY CYCLE < 0.5%, V
GE
= 15V
PULSE DURATION = 250
μ
s
T
J
= 150
o
C
T
J
= 25
o
C
T
J
= 125
o
C
0
10
20
40
30
50
0
1.0
1.5
2.0
2.5
0.5
E
O
,
μ
J
1000
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
500
1500
0
3500
10
20
30
40
50
60
T
J
= 125
o
C, V
GE
= 12V, V
GE
= 15V
R
G
= 3
, L = 200
μ
H, V
CE
= 390V
T
J
= 25
o
C, V
GE
= 12V, V
GE
= 15V
0
2500
2000
3000
1000
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
E
O
,
μ
J
0
600
200
800
1200
1400
T
J
= 25
o
C, V
GE
= 12V OR 15V
T
J
= 125
o
C, V
GE
= 12V OR 15V
400
R
G
= 3
, L = 200
μ
H, V
CE
= 390V
10
20
30
40
50
60
0
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
d
,
20
22
24
26
28
34
10
20
30
40
50
60
0
T
J
= 25
o
C, T
J
= 125
o
C, V
GE
= 15V
T
J
= 25
o
C, T
J
= 125
o
C, V
GE
= 12V
R
G
= 3
, L = 200
μ
H, V
CE
= 390V
32
30
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
r
,
0
40
20
100
80
60
R
G
= 3
, L = 200
μ
H, V
CE
= 390V
V
GE
= 12V, T
J
= 125
o
C, T
J
= 25
o
C
20
10
30
40
50
60
0
T
J
= 25
o
C, V
GE
= 15V
T
J
= 125
o
C, V
GE
= 15V
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相關(guān)代理商/技術(shù)參數(shù) |
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| HGTG30N60B3_NL | 制造商:Rochester Electronics LLC 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述: |
| HGTG30N60B3D | 功能描述:IGBT 晶體管 600V IGBT UFS N-Channel RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGTG30N60B3D | 制造商:Fairchild Semiconductor Corporation 功能描述:IGBTN CH600V30ATO-247 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT,N CH,600V,30A,TO-247 |
| HGTG30N60B3D | 制造商:Fairchild Semiconductor Corporation 功能描述:SEMICONDUCTOR |
| HGTG30N60B3D_04 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
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