參數(shù)資料
型號(hào): HGTG30N60A4D
廠商: INTERSIL CORP
元件分類: 功率晶體管
英文描述: 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode(600V, SMPS系列 N溝道IGBT,帶反并行超快二極管)
中文描述: 75 A, 600 V, N-CHANNEL IGBT, TO-247
文件頁(yè)數(shù): 7/9頁(yè)
文件大?。?/td> 100K
代理商: HGTG30N60A4D
7
FIGURE 23. IGBT NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
Typical Performance Curves
Unless Otherwise Specified
(Continued)
t
1
, RECTANGULAR PULSE DURATION (s)
Z
θ
J
,
10
-2
10
-1
10
0
10
-5
10
-3
10
-2
10
-1
10
0
10
1
10
-4
0.10
t
1
t
2
P
D
DUTY FACTOR, D = t
1
/ t
2
PEAK T
J
= (P
D
X Z
θ
JC
X R
θ
JC
) + T
C
SINGLE PULSE
0.50
0.20
0.05
0.02
0.01
Test Circuit and Waveforms
FIGURE 24. INDUCTIVE SWITCHING TEST CIRCUIT
FIGURE 25. SWITCHING TEST WAVEFORMS
R
G
= 3
L = 200
μ
H
V
DD
= 390V
+
-
DUT
HGTP30N60A4D
DIODE TA49373
t
fI
t
d(OFF)I
t
rI
t
d(ON)I
10%
90%
10%
90%
V
CE
I
CE
V
GE
E
OFF
E
ON2
HGTG30N60A4D
相關(guān)PDF資料
PDF描述
HGTG30N60A4D 600V, SMPS Series N-Channel IGBT with
HGTG30N60A4 600V, SMPS Series N-Channel IGBT(600V, SMPS系列 N溝道IGBT)
HGTG30N60A4 600V, SMPS Series N-Channel IGBT
HGTG30N60B3 2.5V 36-mc CPLD - NOT RECOMMENDED for NEW DESIGN
HGTG30N60C3D 63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes(63A, 600V, UFS系列 N溝道絕緣柵雙極型晶體管)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HGTG30N60A4D 制造商:Intersil Corporation 功能描述:IGBT TO-247
HGTG30N60A4D 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT TO-247
HGTG30N60B3 功能描述:IGBT 晶體管 600V N-Channel IGBT UFS Series RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
HGTG30N60B3_NL 制造商:Rochester Electronics LLC 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述:
HGTG30N60B3D 功能描述:IGBT 晶體管 600V IGBT UFS N-Channel RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube