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參數(shù)資料
| 型號(hào)： | HGTG12N60D1D |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 12A, 600V N-Channel IGBT with Anti-Parallel Ultrafast Diode |
| 中文描述： | 21 A, 600 V, N-CHANNEL IGBT, TO-247 |
| 文件頁(yè)數(shù)： | 5/8頁(yè) |
| 文件大?。?/td> | 229K |
| 代理商： | HGTG12N60D1D |
2003 Fairchild Semiconductor Corporation
HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S9A Rev. B2
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
FIGURE 13. TRANSFER CHARACTERISTIC
FIGURE 14. GATE CHARGE WAVEFORMS
FIGURE 15. TOTAL SWITCHING LOSS vs CASE
TEMPERATURE
FIGURE 16. TOTAL SWITCHING LOSS vs GATE RESISTANCE
Typical Performance Curves
Unless Otherwise Specified
(Continued)
4
8
2
95
6
85
90
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
d
,
12
115
16
14
105
110
10
100
V
GE
= 12V, V
GE
= 15V, T
J
= 25
o
C
V
GE
= 12V, V
GE
= 15V, T
J
= 125
o
C
R
G
= 10
, L = 500
μ
H, V
CE
= 390V
18
20
22
24
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
f
,
10
30
20
50
70
40
60
R
G
= 10
, L = 500
μ
H, V
CE
= 390V
T
J
= 25
o
C, V
GE
= 12V OR 15V
T
J
= 125
o
C, V
GE
= 12V OR 15V
4
8
2
6
12
16
14
10
18
20
22
24
80
90
I
C
,
0
50
100
13
7
8
9
10
12
V
GE
, GATE TO EMITTER VOLTAGE (V)
11
150
200
14
15
250
6
PULSE DURATION = 250
μ
s
DUTY CYCLE < 0.5%, V
CE
= 10V
16
T
J
= 125
o
C
T
J
= -55
o
C
T
J
= 25
o
C
V
G
,
Q
G
, GATE CHARGE (nC)
2
14
0
4
10
I
G(REF)
= 1mA, R
L
= 25
, T
C
= 25
o
C
V
CE
= 200V
V
CE
= 400V
6
8
12
16
V
CE
= 600V
10
20
30
40
60
50
70
80
0
I
CE
= 24A
I
CE
= 12A
I
CE
= 6A
0
0.2
0.4
50
75
100
T
C
, CASE TEMPERATURE (
o
C)
0.6
1.0
125
25
150
1.2
0.8
E
T
,
E
TOTAL
= E
ON2
+ E
OFF
R
G
= 10
, L = 500
μ
H, V
CE
= 390V, V
GE
= 15V
0.1
10
100
R
G
, GATE RESISTANCE (
)
1
5
1000
E
T
,
I
CE
= 12A
I
CE
= 24A
I
CE
= 6A
10
T
J
= 125
o
C, L = 500
μ
H, V
CE
= 390V, V
GE
= 15V
E
TOTAL
= E
ON2
+ E
OFF
HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S9A
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相關(guān)代理商/技術(shù)參數(shù) |
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| HGTG12N60DID | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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| HGTG15N120C3D | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:35A, 1200V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
| HGTG18N120BN | 功能描述:IGBT 晶體管 54A 1200V N-Ch RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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