參數(shù)資料
型號(hào)： HGTG12N60B3D
廠商： INTERSIL CORP
元件分類： 功率晶體管
英文描述： 27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode(27A, 600V, UFS系列帶超快二極管 N溝道絕緣柵雙極型晶體管)
中文描述： 27 A, 600 V, N-CHANNEL IGBT, TO-247
文件頁數(shù)： 5/7頁
文件大?。?/td> 117K
代理商： HGTG12N60B3D
5
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
FIGURE 13. TRANSFER CHARACTERISTIC
FIGURE 14. GATE CHARGE WAVEFORM
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE
Typical Performance Curves
Unless Otherwise Specified
(Continued)
10
15
30
5
125
250
300
25
20
100
200
150
175
225
275
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
d
,
R
G
= 25
, L = 1mH, V
CE
= 480V
T
J
= 150
o
C, V
GE
= 10V, V
GE
= 15V
T
J
= 25
o
C, V
GE
= 10V, V
GE
= 15V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
f
,
10
15
30
5
60
80
100
120
140
25
20
70
90
110
130
T
J
= 150
o
C, V
GE
= 10V, V
GE
= 15V
R
G
= 25
, L = 1mH, V
CE
= 480V
T
J
= 25
o
C, V
GE
= 10V OR 15V
I
C
,
0
20
40
60
80
100
5
7
8
9
10
6
V
GE
, GATE TO EMITTER VOLTAGE (V)
T
C
= 150
o
C
11
12
13
14
15
120
T
C
= -55
o
C
140
160
180
4
PULSE DURATION = 250
μ
s
DUTY CYCLE < 0.5%, V
CE
= 10V
T
C
= 25
o
C
Q
g
, GATE CHARGE (nC)
20
0
12
15
9
6
3
0
10
5
15
30
V
G
,
I
g (REF)
= 1mA, R
L
= 25
, T
C
= 25
o
C
V
CE
= 200V
V
CE
= 400V
V
CE
= 600V
35
40
45
50
25
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
0
5
10
15
20
25
0
C
0.5
1.0
1.5
2.0
2.5
C
IES
C
OES
C
RES
FREQUENCY = 1MHz
HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3DS
相關(guān)PDF資料
PDF描述
HGT1S12N60B3S 27A, 600V, UFS Series N-Channel IGBTs(27A, 600V, UFS系列 N溝道絕緣柵雙極型晶體管)
HGT1S12N60C3DS 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes(24A, 600V, UFS系列 N溝道絕緣柵雙極型晶體管)
HGT1S12N60C3S9A TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 12A I(C) | TO-263AB
HGT1S12N60C3S 24A, 600V, UFS Series N-Channel IGBTs
HGT1S12N60C3S 24A, 600V, UFS Series N-Channel IGBTs(24A, 600V, UFS系列 N溝道絕緣柵雙極型晶體管)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HGTG12N60C3D 功能描述:IGBT 晶體管 24a 600V IGBT UFS N-Channel RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
HGTG12N60C3DR 制造商:Rochester Electronics LLC 功能描述:- Bulk
HGTG12N60D1 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:12A, 600V N-Channel IGBT with Anti-Parallel Ultrafast Diode
HGTG12N60D1D 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris 功能描述:Harris TO-247 NXC6A, NXF7D 制造商:Harris Corporation 功能描述:
HGTG12N60DID 制造商:Rochester Electronics LLC 功能描述:- Bulk
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