參數(shù)資料
型號(hào)： HGTG12N60B3
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 功率晶體管
英文描述： 27A, 600V, UFS Series N-Channel IGBTs
中文描述： 27 A, 600 V, N-CHANNEL IGBT, TO-247
封裝： TO-247, 3 PIN
文件頁(yè)數(shù)： 6/8頁(yè)
文件大?。?/td> 229K
代理商： HGTG12N60B3
2003 Fairchild Semiconductor Corporation
HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S9A Rev. B2
FIGURE 17. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
FIGURE 18. COLLECTOR TO EMITTER ON-STATE VOLTAGE
vs GATE TO EMITTER VOLTAGE
FIGURE 19. IGBT NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
Test Circuit and Waveforms
FIGURE 20. INDUCTIVE SWITCHING TEST CIRCUIT
FIGURE 21. SWITCHING TEST WAVEFORMS
Typical Performance Curves
Unless Otherwise Specified
(Continued)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
C
C
RES
0
5
10
15
20
25
0
0.5
1.0
2.0
2.5
3.0
1.5
FREQUENCY = 1MHz
C
OES
C
IES
V
GE
, GATE TO EMITTER VOLTAGE (V)
8
9
1.9
10
12
2.0
2.2
2.1
11
13
14
15
16
2.3
2.4
V
C
,
I
CE
= 18A
I
CE
= 12A
I
CE
= 6A
DUTY CYCLE < 0.5%, V
GE
= 15V
PULSE DURATION = 250
μ
s, T
J
= 25
o
C
t
1
, RECTANGULAR PULSE DURATION (s)
Z
θ
J
,
10
-2
10
-1
10
0
10
-5
10
-3
10
-2
10
-1
10
0
10
1
10
-4
t
1
t
2
P
D
DUTY FACTOR, D = t
1
/ t
2
PEAK T
J
= (P
D
X Z
θ
JC
X R
θ
JC
) + T
C
SINGLE PULSE
0.1
0.2
0.5
0.05
0.01
0.02
R
G
= 10
L = 500
μ
H
V
DD
= 390V
+
-
RHRP660
t
fI
t
d(OFF)I
t
rI
t
d(ON)I
10%
90%
10%
90%
V
CE
I
CE
V
GE
E
OFF
E
ON2
HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S9A
相關(guān)PDF資料
PDF描述
HGTG12N60B3D 36 MACROCELL 3.3 VOLT ISP CPLD
HGTP12N60B3D 27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode
HGTP12N60B3D Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 470uF; Voltage: 25V; Case Size: 10x12.5 mm; Packaging: Bulk
HGT1S12N60B3DS 27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode
HGTG12N60C3D 24A, 600V, UFS Series N-Channel IGBTs(24A, 600V, UFS系列 N溝道絕緣柵雙極型晶體管)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HGTG12N60B3D 制造商:Harris Corporation 功能描述:
HGTG12N60C3D 功能描述:IGBT 晶體管 24a 600V IGBT UFS N-Channel RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
HGTG12N60C3DR 制造商:Rochester Electronics LLC 功能描述:- Bulk
HGTG12N60D1 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:12A, 600V N-Channel IGBT with Anti-Parallel Ultrafast Diode
HGTG12N60D1D 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris 功能描述:Harris TO-247 NXC6A, NXF7D 制造商:Harris Corporation 功能描述:
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